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82546EB
— Networking Silicon
18
Datasheet
4.0
Voltage, Temperature, and Timing Specifications
Note:
The specification values listed in this section are subject to change without notice. Verify with your
local Intel sales office that you have the latest information before finalizing a design.
4.1
Targeted Absolute Maximum Ratings
4.2
Recommended Operating Conditions
Table 1. Absolute Maximum Ratings
a
a. Maximum ratings are referenced to ground (VSS). Permanent device damage is likely to occur if the ratings in this table are
exceeded. These values should not be used as the limits for normal device operations.
b. The maximum value is the lesser value of 4.6 V or VDD(2.5) + 0.5 V. This specification applies to biasing the device to a steady
state for an indefinite duration. During normal device power-up, explicit power sequencing is not required.
c.
The maximum value is the lesser value of 4.6 V or VDD(2.5) + 0.5 V.
Symbol
Parameter
Min
Max
Unit
VDD (3.3)
DC supply voltage on VDDD or
AVDDH with respect to VSS
VSS - 0.5
4.6
V
VDD (2.5)
DC supply voltage on AVDDL with
respect to VSS
VSS - 0.5
4.6 or
VDD (2.5) + 0.5
b
V
VDD (1.5)
DC supply voltage on DVDD with
respect to VSS
VSS - 0.5
4.6 or
VDD (2.5) + 0.5
c
V
VDD
DC supply voltage
VSS - 0.5
4.6
V
VI / VO
LVTTL input voltage
VSS - 0.5
4.6
V
VI / VO
5 V compatible input voltage
VSS - 0.5
6.6
V
IO
DC output current (by cell type):
IOL = 3 mA
IOL = 6 mA
IOL - 12 mA
10
20
40
mA
TSTG
Storage temperature range
-40
125
C
ESD per MIL_STD-883 Test
Method 3015, Specification 2001V
Latchup Over/Undershoot: 150
mA, 125 C
VDD overstress:
VDD(3.3)(7.2 V)
V
Table 2. Recommended Operating Conditions
a
Symbol
Parameter
Min
Max
Unit
VDD (3.3)
DC supply voltage on VDDD or
AVDDH
3.0
3.6
V
VDD (2.5)
DC supply voltage on AVDDL
c
2.38
2.62
V
VDD (1.5)
DC supply voltage on DVDD
1.43
1.57
V
VIO
PCI bus voltage reference
3.0
5.25
V