參數資料
型號: 70T9169L12PF8
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: SRAM
英文描述: 16K X 9 DUAL-PORT SRAM, 25 ns, PQFP100
封裝: TQFP-100
文件頁數: 12/16頁
文件大?。?/td> 252K
代理商: 70T9169L12PF8
6.42
IDT70T9169/59L
High-Speed 2.5V 16/8K x 9 Synchronous Pipelined Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
5
Recommended Operating
Temperature and Supply Voltage
Recommended DC Operating
Conditions
Absolute Maximum Ratings(1)
Capacitance(1)
(TA = +25°C, f = 1.0MHz)
Grade
Ambient
Temperature(1)
GND
VDD
Commercial
0OC to +70OC0V
2.5V
+ 100mV
Industrial
-40OC to +85OC0V
2.5V
+ 100mV
5654 tbl 04
Symbol
Parameter
Min.
Typ.
Max.
Unit
VDD
Supply Voltage
2.4
2.5
2.6
V
VSS
Ground
0
V
VIH
Input High Voltage
1.7
____
VDD+0.3V(2)
V
VIL
Input Low Voltage
-0.3(1)
____
0.7
V
5654 tbl 05
Symbol
Parameter
Conditions(2)
Max.
Unit
CIN
Input Capacitance
VIN = 0V
9
pF
COUT(2)
Output Capacitance
VOUT = 0V
10
pF
5654 tbl 07
Symbol
Rating
Commercial
& Industrial
Unit
VTERM
(2)
Terminal Voltage
with Respect to
GND
-0.5 to +3.6
V
TBIAS(3)
Temperature
Under Bias
-55 to +125
oC
TSTG
Storage
Temperature
-65 to +150
oC
IOUT
DC Output Current
50
mA
5654 tbl 06
NOTES:
1. "H" = VIH, "L" = VIL, "X" = Don't Care.
2. CE0 and OE = VIL; CE1 and R/W = VIH.
3. Outputs configured in Flow-Through Output mode: if outputs are in Pipelined mode the data out will be delayed by one cycle.
4. ADS and CNTRST are independent of all other signals including CE0 and CE1.
5. The address counter advances if CNTEN = VIL on the rising edge of CLK, regardless of all other signals including CE0 and CE1.
Truth Table IIAddress Counter Control(1,2)
External
Address
Previous
Internal
Address
Internal
Address
Used
CLK
ADS
CNTEN
CNTRST
I/O
(3)
MODE
An
X
An
L
(4)
XH
DI/O (n)
External Address Used
XAn
An + 1
H
L(5)
HDI/O(n+1)
Counter Enabled—Internal Address generation
X
An + 1
HH
H
DI/O(n+1)
External Address Blocked—Counter disab led (An + 1 reused)
XX
A0
XX
L
(4)
DI/O(0)
Counter Reset to Address 0
5654 tbl 03
NOTES:
1. This is the parameter TA. This is the "instant on" case temperature.
NOTES:
1. VIL > -1.5V for pulse width less than 10 ns.
2. VTERM must not exceed VDD +0.3V.
NOTES:
1. These parameters are determined by device characterization, but are not
production tested.
2. COUT also references CI/O.
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. VTERM must not exceed VDD + 0.3.
3. Ambient Temperature Under Bias. AC Conditions. Chip Deselected.
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