參數(shù)資料
型號(hào): 5962F9671201VXC
廠商: INTERSIL CORP
元件分類: 門電路
英文描述: Radiation Hardened Hex Inverter
中文描述: ACT SERIES, HEX 1-INPUT INVERT GATE, CDFP14
封裝: CERAMIC, DFP-14
文件頁數(shù): 8/23頁
文件大?。?/td> 187K
代理商: 5962F9671201VXC
STANDARD
MICROCIRCUIT DRAWING
SIZE
A
5962-96712
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
REVISION LEVEL
D
SHEET
16
DSCC FORM 2234
APR 97
6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
GND ............................................ Ground zero voltage potential.
ICC................................................ Quiescent supply current.
IIL ................................................. Input current low.
IIH................................................. Input current high.
TC ................................................ Case temperature.
TA ................................................ Ambient temperature.
VCC .............................................. Positive supply voltage.
CIN ............................................... Input terminal-to-GND capacitance.
COUT............................................. Output terminal-to-GND capacitance.
CPD .............................................. Power dissipation capacitance.
6.6 Sources of supply.
6.6.1 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535.
The vendors listed in QML-38535 have submitted a certificate of compliance (see 3.6 herein) to DSCC-VA and have agreed to
this drawing.
6.6.2 Approved sources of supply for device class M. Approved sources of supply for class M are listed in MIL-HDBK-103.
The vendors listed in MIL-HDBK-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been
submitted to and accepted by DSCC-VA.
6.7 Additional information. When specified in the purchase order or contract, a copy of the following additional data shall be
supplied.
a. RHA upset levels.
b. Test conditions (SEP).
c. Number of upsets (SEP).
d. Number of transients (SEP).
e. Occurrence of latchup (SEP).
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