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參數(shù)資料
| 型號： | 5962F9671201VXC |
| 廠商： | INTERSIL CORP |
| 元件分類： | 門電路 |
| 英文描述： | Radiation Hardened Hex Inverter |
| 中文描述： | ACT SERIES, HEX 1-INPUT INVERT GATE, CDFP14 |
| 封裝： | CERAMIC, DFP-14 |
| 文件頁數(shù)： | 13/23頁 |
| 文件大?。?/td> | 187K |
| 代理商： | 5962F9671201VXC |
STANDARD
MICROCIRCUIT DRAWING
SIZE
A
5962-96712
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
REVISION LEVEL
D
SHEET
20
DSCC FORM 2234
APR 97
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-96712
A.3.5 Marking. As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a
customer, shall be identified with the wafer lot number, the certification mark, the manufacturer’s identification and the PIN listed
in A.1.2 herein. The certification mark shall be a “QML” or “Q” as required by MIL-PRF-38535.
A.3.6 Certification of compliance. For device classes Q and V, a certificate of compliance shall be required from a
QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see A.6.4 herein). The certificate of
compliance submitted to DSCC-VA prior to listing as an approved source of supply for this appendix shall affirm that the
manufacturer’s product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and the requirements herein.
A.3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535
shall be provided with each lot of microcircuit die delivered to this drawing.
A.4. VERIFICATION
A.4.1 Sampling and inspection. For device classes Q and V, die sampling and inspection procedures shall be in accordance
with MIL-PRF-38535 or as modified in the device manufacturer’s Quality Management (QM) plan. The modifications in the QM
plan shall not affect the form, fit, or function as described herein.
A.4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in the
manufacturer’s QM plan. As a minimum, it shall consist of:
a. Wafer Lot acceptance for class V product using the criteria defined in MIL-STD-883, method 5007.
b. 100% wafer probe (see paragraph A.3.4 herein).
c. 100% internal visual inspection to the applicable class Q or V criteria defined in MIL-STD-883, method 2010 or the
alternate procedures allowed in MIL-STD-883, method 5004.
A.4.3 Conformance inspection.
A.4.3.1 Group E inspection. Group E inspection is required only for parts intended to be identified as radiation assured
(see A.3.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical testing
of packaged die shall be as specified in table IIA herein. Group E tests and conditions are as specified in paragraphs 4.4.4
herein.
A.5. DIE CARRIER
A.5.1 Die carrier requirements. The requirements for the die carrier shall be in accordance with the manufacturer’s QM plan
or as specified in the purchase order by the acquiring activity. The die carrier shall provide adequate physical, mechanical and
electrostatic protection.
A.6. NOTES
A.6.1 Intended use. Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with
MIL-PRF-38535 or MIL-PRF-38534 for government microcircuit applications (original equipment), design applications, and
logistics purposes.
A.6.2 Comments. Comments on this appendix should be directed to DSCC-VA, P.O. Box 3990, Columbus, Ohio
43218-3990 or telephone (614) 692-0547.
A.6.3 Abbreviations, symbols and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
A.6.4 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in
QML-38535. The vendors listed within QML-38535 have submitted a certificate of compliance (see A.3.6 herein) to DSCC-VA
and have agreed to this drawing.
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