參數(shù)資料
型號(hào)： 5962F9671201VXC
廠商： INTERSIL CORP
元件分類(lèi)： 門(mén)電路
英文描述： Radiation Hardened Hex Inverter
中文描述： ACT SERIES, HEX 1-INPUT INVERT GATE, CDFP14
封裝： CERAMIC, DFP-14
文件頁(yè)數(shù)： 7/23頁(yè)
文件大小： 187K
代理商： 5962F9671201VXC
STANDARD
MICROCIRCUIT DRAWING
SIZE
A
5962-96712
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
REVISION LEVEL
D
SHEET
15
DSCC FORM 2234
APR 97
4.4.4.4 Single event phenomena (SEP). When specified in the purchase order or contract, SEP testing shall be performed on
class V devices. SEP testing shall be performed on the Standard Evaluation Circuit (SEC) or alternate SEP test vehicle as
approved by the qualifying activity at initial qualification and after any design or process changes which may affect the upset or
latchup characteristics. Test 4 devices with zero failures. ASTM F1192 may be used as a guideline when performing SEP
testing. The recommended test conditions for SEP are as follows:
a. The ion beam angle of incidence shall be between normal to the die surface and 60
° to the normal, inclusive
(i.e. 0
° ≤ angle ≤ 60°). No shadowing of the ion beam due to fixturing or package related effects is allowed.
b. The fluence shall be
≥ 100 errors or ≥ 107 ions/cm2.
c. The flux shall be between 10
2 and 105 ions/cm2/s. The cross-section shall be verified to be flux independent by
measuring the cross-section at two flux rates which differ by at least an order of magnitude.
d. The particle range shall be
≥ 20 microns in silicon.
e. The upset test temperature shall be +25
°C. The latchup test temperature shall be at the maximum rated operating
temperature
±10°C.
f. Bias conditions shall be VCC = 4.5 V dc for the upset measurements and VCC = 5.5 V dc for the latchup measurements.
g. For SEP test limits, see table IB herein.
4.5 Methods of inspection. Methods of inspection shall be specified as follows:
4.5.1 Voltage and current. Unless otherwise specified, all voltages given are referenced to the microcircuit GND terminal.
Currents given are conventional current and positive when flowing into the referenced terminal.
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes
Q and V or MIL-PRF-38535, appendix A for device class M.
6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications
(original equipment), design applications, and logistics purposes.
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor-
prepared specification or drawing.
6.1.2 Substitutability. Device class Q devices will replace device class M devices.
6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for
the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.
6.3 Record of users. Military and industrial users should inform Defense Supply Center Columbus (DSCC) when a system
application requires configuration control and which SMD's are applicable to that system. DSCC will maintain a record of users
and this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic
devices (FSC 5962) should contact DSCC-VA, telephone (614) 692-0544.
6.4 Comments. Comments on this drawing should be directed to DSCC-VA, Columbus, Ohio 43218-3990, or telephone
(614) 692-0547.
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