參數(shù)資料
型號: 408LP3E
廠商: 美國訊泰微波有限公司上海代表處
英文描述: GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER, 5.1 - 5.9 GHz
中文描述: 砷化鎵的InGaP HBT MMIC的1瓦功率放大器,5月1日至5月9日吉赫
文件頁數(shù): 7/8頁
文件大?。?/td> 359K
代理商: 408LP3E
A
5
5 - 164
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Application Circuit
Note 1: C9, C10 should be located < 0.020” from pins 9, 10, & 11.
Note 2: Application circuit values shown are optimized for 5.7 - 5.9 GHz operation.
Contact our Applications Engineers for optimization of output match for other frequencies.
Recommended Component Values
L1, L2
1.6 nH
C1 - C4
1,000 pF
C5 - C7
100 pF
C8
2.2 μF
C9 - C10
0.5 pF
TL1
TL2
Impedance
50 Ohm
50 Ohm
Length
0.200”
0.100”
HMC408LP3
/
408LP3E
GaAs InGaP HBT MMIC 1 WATT
POWER AMPLIFIER, 5.1 - 5.9 GHz
v03.0705
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