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參數(shù)資料
| 型號： | 408LP3E |
| 廠商： | 美國訊泰微波有限公司上海代表處 |
| 英文描述： | GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER, 5.1 - 5.9 GHz |
| 中文描述： | 砷化鎵的InGaP HBT MMIC的1瓦功率放大器，5月1日至5月9日吉赫 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 359K |
| 代理商： | 408LP3E |
A
5
5 - 160
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Power Compression @ 5.8 GHz
Output IP3 vs. Temperature
Noise Figure vs. Temperature
Reverse Isolation vs. Temperature
Gain, Power & Quiescent
Supply Current vs. Vpd @ 5.8 GHz
Gain & Power vs.
Supply Voltage @ 5.8 GHz
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
4.75
5
5.25
Gain
P1dB
Psat
G
Vcc Supply Voltage (Vdc)
0
1
2
3
4
5
6
7
8
9
10
4.8
5
5.2
5.4
5.6
5.8
6
6.2
+25 C
+85 C
-40 C
N
FREQUENCY (GHz)
-60
-50
-40
-30
-20
-10
0
4.8
5
5.2
5.4
5.6
5.8
6
6.2
Reverse Isolation
Power Down Isolation
I
FREQUENCY (GHz)
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
4.8
5
5.2
5.4
5.6
5.8
6
6.2
+25 C
+85 C
-40 C
O
FREQUENCY (GHz)
12
15
18
21
24
27
30
33
36
0
100
200
300
400
500
600
700
800
3
3.2
3.4
3.6
3.8
4
4.2
4.4
4.6
4.8
5
Psat
Icq
G
I
Vpd (Vdc)
0
3
6
9
12
15
18
21
24
27
30
33
36
-10 -8
-6
-4
-2
0
2
4
6
8
10 12 14 16 18 20
PAE (%)
P
INPUT POWER (dBm)
HMC408LP3
/
408LP3E
GaAs InGaP HBT MMIC 1 WATT
POWER AMPLIFIER, 5.1 - 5.9 GHz
v03.0705
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參數(shù)描述 |
|---|---|
| 408N10K | 制造商:Honeywell Sensing and Control 功能描述: |
| 408N-2.5 | 制造商:Honeywell Sensing and Control 功能描述: |
| 408N2500 | 制造商:HONEYWELL CLAROSTAT 功能描述:Res Conductive Plastic POT 2.5K Ohm 10% 1/2W 1(Elec)/1(Mech)Turn 3.18mm (30.96 X 12.7 X 13.34mm) Pin Panel Mount/Through Hole |
| 408N25K | 制造商:Honeywell Sensing and Control 功能描述: |
| 408N500 | 制造商:HONEYWELL CLAROSTAT 功能描述:Res Conductive Plastic POT 500 Ohm 10% 1/2W 1(Elec)/1(Mech)Turn 3.18mm (30.96 X 12.7 X 13.34mm) Pin Panel Mount/Through Hole |
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