參數(shù)資料
型號(hào)： 408LP3E
廠商： 美國(guó)訊泰微波有限公司上海代表處
英文描述： GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER, 5.1 - 5.9 GHz
中文描述： 砷化鎵的InGaP HBT MMIC的1瓦功率放大器，5月1日至5月9日吉赫
文件頁(yè)數(shù)： 1/8頁(yè)
文件大?。?/td> 359K
代理商： 408LP3E
A
5
5 - 158
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC408LP3
/
408LP3E
GaAs InGaP HBT MMIC 1 WATT
POWER AMPLIFIER, 5.1 - 5.9 GHz
v03.0705
General Description
Features
Functional Diagram
The HMC408LP3 & HMC408LP3E are 5.1 - 5.9 GHz
high efficiency GaAs InGaP Heterojunction Bipolar
Transistor (HBT) Power Amplifier MMICs which offer
+30 dBm P1dB. The amplifier provides 20 dB of gain,
+32.5 dBm of saturated power, and 27% PAE from a
+5.0V supply voltage. The input is internally matched
to 50 Ohms while the output requires a minimum
of external components. Vpd can be used for full
power down or RF output power/current control. The
amplifier is packaged in a low cost, 3x3 mm leadless
surface mount package with an exposed base for
improved RF and thermal performance.
Gain: 20 dB
Saturated Power: +32.5 dBm @ 27% PAE
Single Supply Voltage: +5.0 V
Power Down Capability
3x3 mm Leadless SMT Package
Electrical Specifications,
T
A
= +25° C, Vs = 5V, Vpd = 5V
Typical Applications
The HMC408LP3 / HMC408LP3E is ideal for:
802.11a & HiperLAN WLAN
UNII & Point-to-Point / Multi-Point Radios
Access Point Radios
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
5.7 - 5.9
5.1 - 5.9
GHz
Gain
17
20
17
20
dB
Gain Variation Over Temperature
0.045
0.055
0.045
0.055
dB/°C
Input Return Loss
8
8
dB
Output Return Loss*
14
6
dB
Output Power for 1 dB Compression
(P1dB)
Icq= 750 mA
Icq= 500 mA
27
30
27
24
27
23
dBm
Saturated Output Power (Psat)
32.5
31
dBm
Output Third Order Intercept (IP3)
40
43
36
39
dBm
Harmonics, Pout= 30 dBm, F= 5.8 GHz
2 fo
3 fo
-50
-90
-50
-90
dBc
dBc
Noise Figure
6
6
dB
Supply Current (Icq)
Vpd= 0V/5V
0.002 / 750
0.002 / 750
mA
Control Current (Ipd)
Vpd= 5V
14
14
mA
Switching Speed
tOn, tOff
50
50
ns
* Output match optimized for 5.7 - 5.9 GHz operation. See Application Circuit herein.
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