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參數(shù)資料
| 型號(hào)： | 408LP3E |
| 廠商： | 美國訊泰微波有限公司上海代表處 |
| 英文描述： | GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER, 5.1 - 5.9 GHz |
| 中文描述： | 砷化鎵的InGaP HBT MMIC的1瓦功率放大器，5月1日至5月9日吉赫 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大小： | 359K |
| 代理商： | 408LP3E |
A
5
5 - 162
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
1
Vpd
Power control pin. For maximum power, this pin should be
connected to 5.0V. A higher voltage is not recommended.
For lower idle current, this voltage can be reduced.
2, 4, 5 - 8, 12,
13, 15
N/C
No Connection
3
RFIN
This pin AC coupled and matched to 50 Ohms from
5.1 - 5.9 GHz.
9, 10, 11
RFOUT
RF output and DC bias for the output stage.
14
Vcc2
Power supply voltage for the second amplifier stage. Exter-
nal bypass capacitors and pull up choke are required as
shown in the application schematic.
16
Vcc1
Power supply voltage for the first amplifier stage. External
bypass capacitors are required as shown in the application
schematic.
GND
Ground: Backside of package has exposed metal ground
slug that must be connected to ground thru a short path.
Vias under the device are required.
HMC408LP3
/
408LP3E
GaAs InGaP HBT MMIC 1 WATT
POWER AMPLIFIER, 5.1 - 5.9 GHz
v03.0705
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