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參數(shù)資料
| 型號： | 408LP3E |
| 廠商： | 美國訊泰微波有限公司上海代表處 |
| 英文描述： | GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER, 5.1 - 5.9 GHz |
| 中文描述： | 砷化鎵的InGaP HBT MMIC的1瓦功率放大器，5月1日至5月9日吉赫 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 359K |
| 代理商： | 408LP3E |
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Outline Drawing
Absolute Maximum Ratings
Typical Supply Current
vs. Vs= Vcc1 + Vcc2
Note: Amplifier will operate over full voltage range shown above
Vs (V)
Icq (mA)
4.75
725
5.0
750
5.25
780
Collector Bias Voltage (Vcc1, Vcc2)
+5.5 Vdc
Control Voltage (Vpd)
+5.5 Vdc
RF Input Power (RFin)(Vs = Vpd = +5.0 Vdc)
+20 dBm
Junction Temperature
150
°
C
Continuous Pdiss (T = 85
°
C)
(derate 72.5 mW/
°
C above 85
°
C)
4.71 W
Thermal Resistance
(junction to ground paddle)
13.8
°
C/W
-65 to +150
°
C
Operating Temperature
-40 to +85
°
C
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
LAND PATTERN.
Part Number
Package Body Material
Lead Finish
MSL Rating
Package Marking
[3]
HMC408LP3
Low Stress Injection Molded Plastic
Sn/Pb Solder
MSL1
[1]
408
XXXX
HMC408LP3E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL1
[2]
408
XXXX
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
Package Information
HMC408LP3
/
408LP3E
GaAs InGaP HBT MMIC 1 WATT
POWER AMPLIFIER, 5.1 - 5.9 GHz
v03.0705
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
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| 408N25K | 制造商:Honeywell Sensing and Control 功能描述: |
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