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參數(shù)資料
| 型號： | 39VF6401 |
| 廠商： | Silicon Storage Technology, Inc. |
| 元件分類： | FLASH |
| 英文描述： | 64 Mbit (x16) Multi-Purpose Flash Plus |
| 中文描述： | 64兆位（x16）的多功能閃存+ |
| 文件頁數(shù)： | 8/32頁 |
| 文件大?。?/td> | 513K |
| 代理商： | 39VF6401 |
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8
Preliminary Specifications
16 Mbit / 32 Mbit / 64 Mbit Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201 / SST39VF6401
SST39VF1602 / SST39VF3202 / SST39VF6402
2003 Silicon Storage Technology, Inc.
S71223-03-000
11/03
TABLE
4: P
IN
D
ESCRIPTION
Symbol
A
MS1
-A
0
Pin Name
Address Inputs
Functions
To provide memory addresses.
During Sector-Erase A
MS
-A
11
address lines will select the sector.
During Block-Erase A
MS
-A
15
address lines will select the block.
To output data during Read cycles and receive input data during Write cycles.
Data is internally latched during a Write cycle.
The outputs are in tri-state when OE# or CE# is high.
To protect the top/bottom boot block from Erase/Program operation when grounded.
To reset and return the device to Read mode.
To activate the device when CE# is low.
To gate the data output buffers.
To control the Write operations.
To provide power supply voltage: 2.7-3.6V
DQ
15
-DQ
0
Data Input/output
WP#
RST#
CE#
OE#
WE#
V
DD
V
SS
NC
Write Protect
Reset
Chip Enable
Output Enable
Write Enable
Power Supply
Ground
No Connection
Unconnected pins.
T4.2 1223
1. A
MS
= Most significant address
A
MS
= A
19
for SST39VF1601/1602, A
20
for SST39VF3201/3202, and A
21
for SST39VF6401/6402
TABLE
5: O
PERATION
M
ODES
S
ELECTION
Mode
Read
Program
Erase
CE#
V
IL
V
IL
V
IL
OE#
V
IL
V
IH
V
IH
WE#
V
IH
V
IL
V
IL
DQ
D
OUT
D
IN
X
1
Address
A
IN
A
IN
Sector or block address,
XXH for Chip-Erase
X
X
X
1. X can be V
IL
or V
IH
, but no other value.
Standby
Write Inhibit
V
IH
X
X
X
V
IL
X
X
X
High Z
High Z/ D
OUT
High Z/ D
OUT
V
IH
Product Identification
Software Mode
V
IL
V
IL
V
IH
See Table 6
T5.0 1223
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