參數(shù)資料
型號(hào)： 39VF6401
廠商： Silicon Storage Technology, Inc.
元件分類： FLASH
英文描述： 64 Mbit (x16) Multi-Purpose Flash Plus
中文描述： 64兆位（x16）的多功能閃存+
文件頁(yè)數(shù)： 10/32頁(yè)
文件大?。?/td> 513K
代理商： 39VF6401
10
Preliminary Specifications
16 Mbit / 32 Mbit / 64 Mbit Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201 / SST39VF6401
SST39VF1602 / SST39VF3202 / SST39VF6402
2003 Silicon Storage Technology, Inc.
S71223-03-000
11/03
TABLE
Address
10H
11H
12H
13H
14H
15H
16H
17H
18H
19H
1AH
7: CFI Q
UERY
I
DENTIFICATION
S
TRING
1
FOR
SST39VF160
X
/320
X
/640
X
Data
Data
0051H
Query Unique ASCII string “QRY”
0052H
0059H
0001H
Primary OEM command set
0007H
0000H
Address for Primary Extended Table
0000H
0000H
Alternate OEM command set (00H = none exists)
0000H
0000H
Address for Alternate OEM extended Table (00H = none exits)
0000H
T7.1 1223
1. Refer to CFI publication 100 for more details.
TABLE
8: S
YSTEM
I
NTERFACE
I
NFORMATION
FOR
SST39VF160
X
/320
X
/640
X
Address
1BH
Data
0027H
Data
V
DD
Min (Program/Erase)
DQ
7
-DQ
4
: Volts, DQ
3
-DQ
0
: 100 millivolts
V
DD
Max (Program/Erase)
DQ
7
-DQ
4
: Volts, DQ
3
-DQ
0
: 100 millivolts
V
PP
min. (00H = no V
PP
pin)
V
PP
max. (00H = no V
PP
pin)
Typical time out for Word-Program 2
N
μs (2
3
= 8 μs)
Typical time out for min. size buffer program 2
N
μs (00H = not supported)
Typical time out for individual Sector/Block-Erase 2
N
ms (2
4
= 16 ms)
Typical time out for Chip-Erase 2
N
ms (2
5
= 32 ms)
Maximum time out for Word-Program 2
N
times typical (2
1
x 2
3
= 16 μs)
Maximum time out for buffer program 2
N
times typical
Maximum time out for individual Sector/Block-Erase 2
N
times typical (2
1
x 2
4
= 32 ms)
Maximum time out for Chip-Erase 2
N
times typical (2
1
x 2
5
= 64 ms)
1CH
0036H
1DH
1EH
1FH
20H
21H
22H
23H
24H
25H
26H
0000H
0000H
0003H
0000H
0004H
0005H
0001H
0000H
0001H
0001H
T8.3 1223
TABLE
Address
27H
28H
29H
2AH
2BH
2CH
2DH
2EH
2FH
30H
31H
32H
33H
34H
9: D
EVICE
G
EOMETRY
I
NFORMATION
FOR
SST39VF1601/1602
Data
Data
0015H
Device size = 2
N
Bytes (15H = 21; 2
21
= 2 MByte)
0001H
Flash Device Interface description; 0001H = x16-only asynchronous interface
0000H
0000H
Maximum number of byte in multi-byte write = 2
N
(00H = not supported)
0000H
0002H
Number of Erase Sector/Block sizes supported by device
00FFH
Sector Information (y + 1 = Number of sectors; z x 256B = sector size)
0001H
y = 511 + 1 = 512 sectors (01FF = 511
0010H
0000H
z = 16 x 256 Bytes = 4 KByte/sector (0010H = 16)
001FH
Block Information (y + 1 = Number of blocks; z x 256B = block size)
0000H
y = 31 + 1 = 32 blocks (001F = 31)
0000H
0001H
z = 256 x 256 Bytes = 64 KByte/block (0100H = 256)
T9.0 1223
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