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參數(shù)資料
| 型號： | 2SK3653B |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM |
| 中文描述： | N溝道硅片結(jié)型場效應(yīng)晶體管的阻抗流腦轉(zhuǎn)爐 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 123K |
| 代理商： | 2SK3653B |
Data Sheet D17284EJ1V0DS
3
2SK3653B
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF POWER DISSIPATION
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
d
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
T
A
- Ambient Temperature - °C
I
D
μ
A
0
200
400
600
800
1000
0
2
4
6
8
10
0 V
0.2 V
0.3 V
0.1 V
V
GS
= 0.2 V
0.1 V
V
DS
- Drain to Source Voltage - V
GATE TO SOURCE CURRENT vs.
GATE TO SOURCE VOLTAGE
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
I
G
μ
A
0
10
20
30
40
10
20
30
40
0.2
0.4 0.6
0.8
0.2
0.4
0.6
0.8
V
GS
- Gate to Source Voltage - V
I
D
μ
A
0
200
400
600
800
1000
1200
1400
1600
-0.8 -0.6 -0.4 -0.2
0
0.2
0.4
0.6
0.8
1
V
DS
= 2.0 V
V
GS
- Gate to Source Voltage - V
INPUT CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER ADMITTANCE AND GATE
CUT-OFF VOLTAGE vs. ZERO GATE VOLTAGE
DRAIN CURRENT
C
i
1
10
1
10
100
V
GS
= 0 V
f = 1.0 MHz
V
DS
- Drain to Source Voltage - V
|
f
V
G
0.1
1
10
10
100
1000
| y
fs
|
V
GS(off)
V
DS
= 2.0 V
I
DSS
- Zero Gate Voltage Drain Current -
μ
A
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|---|---|
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|---|---|
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| 2SK365-GR(F) | 制造商:Toshiba America Electronic Components 功能描述: |
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