參數(shù)資料
型號(hào)： 2SK3659
廠商： NEC Corp.
英文描述： SWITCHING N-CHANNEL POWER MOSFET
中文描述： 開(kāi)關(guān)N溝道功率MOSFET
文件頁(yè)數(shù)： 1/8頁(yè)
文件大?。?/td> 77K
代理商： 2SK3659
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confirm that this is the latest version.
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availability and additional information.
2002
MOS FIELD EFFECT TRANSISTOR
2SK3659
SWITCHING
N-CHANNEL POWER MOS FET
Document No. D16251EJ2V0DS00 (2nd edition)
Date Published June 2002 NS CP (K)
Printed in Japan
DATA SHEET
DESCRIPTION
The 2SK3659 is N-channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
FEATURES
4.5V drive available.
Low on-state resistance,
R
DS(on)1
= 5.7 m
MAX. (V
GS
= 10 V, I
D
= 40 A)
Low gate charge,
Q
G
= 32 nC TYP. (V
DD
= 16 V, V
GS
= 10 V, I
D
= 65 A)
Built-in gate protection diode.
Avalanche capability ratings.
Isolated TO-220 package.
ABSOLUTE MAXIMUM RATING (T
A
= 25
°C
)
Drain to source voltage (V
GS
= 0 V)
Gate to source voltage (V
DS
= 0 V)
V
DSS
V
GSS
20
±
20
V
V
Drain current (DC) (T
C
= 25°C)
I
D(DC)
±
65
A
Drain current (pulse)
Note1
I
D(pulse)
±
260
A
Total power dissipation (T
A
= 25°C)
P
T1
2.0
W
Total power dissipation (T
C
= 25°C)
P
T2
25
W
Channel temperature
T
ch
150
°
C
Storage temperature
T
stg
55 to +150
°
C
Single Avalanche Current
Note2
I
AS
35
A
Single Avalanche Energy
Note2
E
AS
122
mJ
Note 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25
°
C, V
DD
= 10 V, R
G
= 25
,
V
GS
= 20
→
0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3659
Isolated TO-220
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