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參數(shù)資料
| 型號(hào)： | 2SK3664 |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | N溝道MOS場(chǎng)效應(yīng)晶體管開關(guān) |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 139K |
| 代理商： | 2SK3664 |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
2003
MOS FIELD EFFECT TRANSISTOR
2SK3664
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No. D16599EJ2V0DS00 (2nd edition)
Date Published November 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
DESCRIPTION
The 2SK3664 is a switching device, which can be driven directly
by a 2.5 V power source.
The device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
FEATURES
2.5 V drive available
Low on-state resistance
R
DS(on)1
= 0.57
MAX. (V
GS
= 4.5
V, I
D
= 0.3
A)
R
DS(on)2
= 0.60
MAX. (V
GS
= 4.0
V, I
D
= 0.3 A)
R
DS(on)3
= 0.88
MAX. (V
GS
= 2.5
V, I
D
= 0.15 A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3664
SC-75 (USM)
Marking: G1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
20
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
±12
V
Drain Current (DC)
Drain Current (pulse)
Note1
Total Power Dissipation
Note2
I
D(DC)
±0.5
A
I
D(pulse)
±2.0
A
P
T
0.2
W
Channel Temperature
T
ch
150
°C
Storage Temperature
T
stg
55 to +150
°C
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Mounted on ceramic substrate of 300 mm
2
x 0.64 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
Caution This product is electrostatic-sensitive device due to low ESD capability and shoud be handled with
caution for electrostatic discharge.
V
ESD
= ±200 V TYP. (C = 200 pF, R = 0
, Single pulse)
PACKAGE DRAWING (Unit: mm)
0.3
1
0
2
0.2
+0.1
–0
0.5
1: Source
2: Gate
3: Drain
0.5
1.0
1.6 ± 0.1
3
1
0.6
0.75 ± 0.05
0 to 0.1
0.15
+0.1
–0
EQUIVALENT CIRCUIT
Drain
Source
Body
Diode
Gate
Protection
Diode
Gate
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3668 | SWITCHING N-CHANNEL POWER MOSFET |
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| 2SK3705 | 2SK3705 |
| 2SK3712 | SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3712-Z | SWITCHING N-CHANNEL POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3664-T1-A | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 20V 0.5A 3-Pin SC-75 T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,20V,0.5A,0.38ohm,USM3 制造商:Renesas 功能描述:Trans MOSFET N-CH 20V 0.5A 3-Pin SC-75 T/R |
| 2SK3666-2-TB-E | 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3666-3-TB-E | 功能描述:JFET SWITCHING DEVICE RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| 2SK3666-4-TB-E | 功能描述:JFET NCH J-FET RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| 2SK3667 | 功能描述:MOSFET N-Ch 600V 7.5A Rdson 1 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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