參數(shù)資料
型號(hào): 2SK3712
廠商: NEC Corp.
英文描述: SWITCHING N-CHANNEL POWER MOSFET
中文描述: 開(kāi)關(guān)N溝道功率MOSFET
文件頁(yè)數(shù): 1/8頁(yè)
文件大小: 166K
代理商: 2SK3712
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2002
MOS FIELD EFFECT TRANSISTOR
2SK3712
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D16372EJ2V0DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
DESCRIPTION
The 2SK3712 is N-channel MOS FET device that features a low
on-state resistance and excellent switching characteristics, and
designed for high voltage applications such as DC/DC converter.
FEATURES
High voltage: V
DSS
= 250 V
Gate voltage rating: ±30 V
Low on-state resistance
R
DS(on)
= 0.58
MAX. (V
GS
= 10 V, I
D
= 4.5 A)
Low C
iss
: C
iss
= 450 pF TYP. (V
DS
= 10 V, I
D
= 0 A)
Built-in gate protection diode
TO-251/TO-252 package
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
250
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
±30
V
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
I
D(DC)
±9.0
A
I
D(pulse)
±27
A
Total Power Dissipation (T
C
= 25°C)
P
T1
40
W
Total Power Dissipation (T
A
= 25°C)
P
T2
1.0
W
Channel Temperature
T
ch
150
°C
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
Repetitive Avalanche Current
Note3
Repetitive Pulse Avalanche Energy
Note3
T
stg
–55 to +150
°C
I
AS
9
A
E
AS
8.1
mJ
I
AR
9
A
E
AR
8.1
mJ
Notes 1.
PW
10
μ
s, Duty cycle
1%
2.
Starting T
ch
= 25°C, V
DD
= 125 V, R
G
= 25
, V
GS
= 20
0 V, L = 100
μ
H
3.
T
ch(peak)
150°C, L = 100
μ
H
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3712
TO-251 (MP-3)
2SK3712-Z
TO-252 (MP-3Z)
(TO-251)
(TO-252)
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