參數(shù)資料
型號(hào): 2SK3659
廠商: NEC Corp.
英文描述: SWITCHING N-CHANNEL POWER MOSFET
中文描述: 開(kāi)關(guān)N溝道功率MOSFET
文件頁(yè)數(shù): 4/8頁(yè)
文件大小: 77K
代理商: 2SK3659
Data Sheet D16251EJ2V0DS
4
2SK3659
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
0
50
100
150
200
250
300
0
0.5
1
1.5
2
Pulsed
V
GS
= 10 V
4.5 V
V
DS
- Drain to Source Voltage - V
I
D
0.01
0.1
1
10
100
1000
1
2
3
4
5
6
Pulsed
V
DS
= 10 V
T
ch
= 150°C
75°C
25°C
55°C
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-50
0
50
100
150
V
DS
= 10 V
I
D
= 1 mA
T
ch
- Channel Temperature -
°
C
|
f
0.1
1
10
100
0.01
0.1
1
10
100
Pulsed
V
DS
= 10 V
T
ch
= 150°C
75°C
25°C
55°C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0
5
10
15
20
25
0.1
1
10
100
1000
Pulsed
V
GS
= 4.5 V
10 V
0
5
10
15
20
0
5
10
15
20
Pulsed
I
D
= 40 A
R
D
I
D
- Drain Current - A
R
D
V
GS
- Gate to Source Voltage - V
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