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參數(shù)資料
| 型號(hào)： | 2SK3653C |
| 廠商： | NEC Corp. |
| 英文描述： | JUNCTION FIELD EFFECT TRANSISTOR |
| 中文描述： | 結(jié)型場效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 133K |
| 代理商： | 2SK3653C |
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confirm that this is the latest version.
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JUNCTION FIELD EFFECT TRANSISTOR
2SK3653C
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM
DATA SHEET
Document No. D18895EJ1V0DS00 (1st edition)
Date Published August 2007 NS
Printed in Japan
2007
DESCRIPTION
The 2SK3653C contains a diode and high resistivity
between its gates and sources, for achieving short stability
time during power-on. In addition, because of its compact
package and low noise, the 2SK3653C is especially suitable
for compact ECMs for audio or mobile devices such as cell-
phones.
FEATURES
Low noise:
108.5 dB TYP. (V
DD
= 2.0 V, C = 5 pF, R
L
= 2.2 k
Ω
)
Containing a diode and high resistivity, short stability time is
achieved during power-on.
Super thin thickness package: 3pXSOF (0814)
t = 0.37 mm TYP.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3653C
3pXSOF (0814)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Drain to Source Voltage (V
GS
=
1.0 V)
V
DSX
20
V
Gate to Drain Voltage
V
GDO
20
V
Drain Current
I
D
10
mA
Gate Current
I
G
10
mA
Total Power Dissipation
P
T
100
mW
Junction Temperature
T
j
125
°
C
°
C
Storage Temperature
T
stg
55 to
+
125
Caution Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
PACKAGE DRAWING (Unit: mm)
0.3 ±0.05
1
MAX. 0.4
0
1.4 ±0.1
0 to 0.05
0
.13
+0.1
0.2
+0.1
–0
0
2
0.45
0.45
3
1
(
EQUIVALENT CIRCUIT
3
2
1
1: Source
2: Drain
3: Gate
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