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參數(shù)資料
| 型號： | 2SK3653B |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM |
| 中文描述： | N溝道硅片結(jié)型場效應晶體管的阻抗流腦轉(zhuǎn)爐 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 123K |
| 代理商： | 2SK3653B |
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JUNCTION FIELD EFFECT TRANSISTOR
2SK3653B
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM
DATA SHEET
Document No. D17284EJ1V0DS00 (1st edition)
Date Published August 2004 NS CP(K)
Printed in Japan
2004
DESCRIPTION
The 2SK3653B is suitable for converter of ECM.
General-purpose product.
FEATURES
Low noise:
108.5 dB TYP. (V
DD
= 2.0 V, C = 5 pF, R
L
= 2.2 k
)
Especially suitable for audio and telephone
Super thin thickness package:
t = 0.37 mm TYP.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3653B
3pXSOF (0814)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
=
1.0 V)
V
DSX
20
V
Gate to Drain Voltage
V
GDO
20
V
Drain Current
I
D
10
mA
Gate Current
I
G
10
mA
Total Power Dissipation
P
T
100
mW
Junction Temperature
T
j
125
°C
Storage Temperature
T
stg
55 to +125
°C
Caution Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
PACKAGE DRAWING (Unit: mm)
0.3 ±0.05
1
MAX. 0.4
0
1.4 ±0.1
0 to 0.05
0
.13
+0.1
0.2
+0.1
–0
0
2
0.45
0.45
3
1
(
EQUIVALENT CIRCUIT
3
2
1
1: Source
2: Drain
3: Gate
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| 2SK3658(TE12L,F) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-Channel 60V 2A SOT89 |
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| 2SK365-GR(F) | 制造商:Toshiba America Electronic Components 功能描述: |
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