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參數(shù)資料
| 型號： | 2SK1960 |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING |
| 中文描述： | N溝道場效應晶體管的高速開關 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 60K |
| 代理商： | 2SK1960 |
1996
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1960
The 2SK1960 is an N-channel vertical MOS FET. Because
it can be driven by a voltage as low as 1.5 V and it is not
necessary to consider a drive current, this FET is ideal as an
actuator for low-current portable systems such as headphone
stereos and video cameras.
FEATURES
Gate can be driven by 1.5 V
Low ON resistance
R
DS(on)
= 0.8
MAX.
R
DS(on)
= 0.2
MAX.
@ V
GS
= 1.5 V, I
D
= 0.1 A
@ V
GS
= 4.0 V, I
D
= 1.5 A
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
RATING
UNIT
Drain to Source Voltage
V
DSS
V
GS
= 0
16
V
Gate to Source Voltage
V
GSS
V
DS
= 0
±
7.0
V
Drain Current (DC)
I
D(DC)
±
3.0
A
Drain Current (Pulse)
I
D(pulse)
PW
≤
10 ms, duty cycle
≤
50 %
±
6.0
A
Total Power Dissipation
P
T
16 cm
2
×
0.7 mm ceramic substrate used
2.0
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
–55 to +150
C
Document No. D11223EJ2V0DS00 (2nd edition)
Date Published June 1996 P
Printed in Japan
PACKAGE DIMENSIONS (in mm)
1.6 ±0.2
4.5 ±0.1
0.42 ±0.06
0
1.5
0.47
±0.06
3.0
2
4
0.41
+0.03
1.5 ±0.1
S
D
G
0.42 ±0.06
Marking: NR
EQUIVALENT CURCUIT
Source (S)
Internal
diode
Gate
protection
diode
Gate (G)
Drain (D)
PIN CONNECTIONS
S:
D:
G:
Gate
Source
Drain
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1960-AZ | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA |
| 2SK1960T1AZ | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK1960-T1-AZ | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 16V 3A 4-Pin(3+Tab) SC-62 T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA 制造商:Renesas 功能描述:Trans MOSFET N-CH 16V 3A 4-Pin(3+Tab) SC-62 T/R |
| 2SK198 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK1981-01SC | 制造商:Fuji Electric 功能描述: |
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