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| 型號： | 2SK1961 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | N-Channel Junction Silicon FET for High-Frequency Low-Noise Amplifier Applications(高頻低噪聲放大器應(yīng)用的N溝道結(jié)型場效應(yīng)管) |
| 中文描述： | N溝道場效應(yīng)晶體管的結(jié)硅高頻低噪聲放大器的應(yīng)用（高頻低噪聲放大器應(yīng)用的?溝道結(jié)型場效應(yīng)管） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 166K |
| 代理商： | 2SK1961 |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Junction Silicon FET
2SK1961
High-Frequency Low-Noise
Amplifier Applications
Ordering number:ENN4502
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71599TH (KT)/13194TH (KOTO) X-8395 No.4502–1/6
Specifications
Absolute Maximum Ratings
at Ta = 25C
Package Dimensions
unit:mm
2019B
[2SK1961]
Applications
· High-frequency low-noise amplifier applications.
Features
· Adoption of FBET process.
· Large
|
y
fs
|
.
· Small Ciss.
· Ultralow noise figure.
C
C
Electrical Characteristics
at Ta = 25C
1 : Source
2 : Gate
3 : Drain
SANYO : NP
JEDEC : TO-92
EIAJ
: SC-43
* : The 2SK1961 is classified by I
DSS
as follows : (unit : mA).
Continued on next page.
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