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參數(shù)資料
| 型號(hào)： | 2SJ484 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P-Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅P溝道場(chǎng)效應(yīng)晶體管高速電源開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 6/9頁(yè) |
| 文件大?。?/td> | 43K |
| 代理商： | 2SJ484 |
2SJ484
6
5
–0.1 –0.2
Reverse Drain Current I (A)
200
500
100
20
10
50
–0.5
–1
–2
–5
–10
0
–10
–20
–30
–40
–50
500
200
100
20
10
50
1000
0
–10
–20
–30
–40
0
0
–4
–8
–12
–16
–20
–50
4
8
12
16
20
200
100
20
50
10
500
5
–0.1 –0.2
–0.5
–1
–2
–5
–10
di / dt = 50 A /
μ
s
V = 0, Ta = 25
°
C
Ciss
Coss
Crss
V = 0
f = 1 MHz
V
GS
V
DS
V = –5 V
–10 V
–25 V
I = –2 A
V = –5 V
–10 V
–25 V
tf
r
d(on)
t
d(off)
t
V = –10 V, V = –10 V
duty < 1 %
R
Body to Drain Diode Reverse
Recovery Time
C
Drain to Source Voltage V (V)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
D
D
G
G
Dynamic Input Characteristics
Drain Current I (A)
S
Switching Characteristics
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ486 | RELAY-.5AMP-DC-6V/DIODE RoHS Compliant: Yes |
| 2SJ490 | TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 10A I(D) | TO-252 |
| 2SJ491 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SJ49 | LOW FREQUENCY POWER AMPLIFIER |
| 2SJ496 | Silicon P-Channel MOS FET High Speed Power Switching |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ484WY(TL-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ484WYTL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ484WYTR-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ485 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ485TP | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 4A I(D) | TO-251VAR |
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