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參數(shù)資料
| 型號(hào)： | 2SJ484 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P-Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅P溝道場(chǎng)效應(yīng)晶體管高速電源開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大?。?/td> | 43K |
| 代理商： | 2SJ484 |
2SJ484
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
–30
—
—
V
I
D
= –10mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
20
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Zero gate voltege drain
current
I
DSS
—
—
–10
μ
A
V
DS
= –30 V, V
GS
= 0
Gate to source leak current
I
GSS
V
GS(off)
R
DS(on)
—
—
±
10
μ
A
V
GS
=
±
16V, V
DS
= 0
I
D
= –1mA, V
DS
= –10V
I
D
= –1A, V
GS
= –10V*
1
Gate to source cutoff voltage
–1.0
—
–2.0
V
Static drain to source on state
resistance
—
0.18
0.23
R
DS(on)
|y
fs
|
Ciss
—
0.3
0.45
I
D
= –1A, V
GS
= –4V*
1
I
D
= –1A, V
DS
= –10V*
1
V
DS
= –10V
V
GS
= 0
f = 1MHz
Forward transfer admittance
1.2
2.0
—
S
Input capacitance
—
230
—
pF
Output capacitance
Coss
—
140
—
pF
Reverse transfer capacitance Crss
—
50
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
10
—
ns
I
D
= –1A, R
L
= 30
V
GS
= –10V
Rise time
—
30
—
ns
Turn-off delay time
—
35
—
ns
Fall time
—
30
—
ns
Body to drain diode forward
voltage
—
–0.95
—
V
I
F
= –2A, V
GS
= 0
Body to drain diode reverse
recovery time
Notes: 1. Pulse test
2. Marking is “WY”.
t
rr
—
60
—
ns
I
= –2A, V
= 0
diF/ dt = 50A/
μ
s
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2SJ484WY(TL-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ484WYTL-E | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ484WYTR-E | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ485 | 制造商:SANYO 制造商全稱(chēng):Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ485TP | 制造商:SANYO 制造商全稱(chēng):Sanyo Semicon Device 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 4A I(D) | TO-251VAR |
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