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參數(shù)資料
| 型號(hào)： | 2SJ484 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P-Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅P溝道場(chǎng)效應(yīng)晶體管高速電源開關(guān) |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 43K |
| 代理商： | 2SJ484 |
2SJ484
4
Main Characteristics
2.0
1.5
1.0
0.5
0
50
100
150
200
–0.1 –0.3
Drain to Source Voltage V (V)
–1
–3
–10
–30
–100
–10
–3
–1
–0.3
–0.1
–0.03
–0.01
–5
–4
–3
–2
–1
0
–2
–4
–6
–8
–10
–10 V –6 V
–5
–4
–3
–2
–1
0
–1
–2
–3
–4
GS
–5
Ta = 25
°
C
DCOpeaion
100
μ
s
PW=10ms
(1sho)
V = –2.5 V
Pulse Test
–4 V
–3 V
–5 V
–4.5 V
–3.5 V
Tc = 75
°
C
25
°
C
–25
°
C
C
Ambient Temperature Ta (
°
C)
Power vs. Temperature Derating
D
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
D
D
Typical Output Characteristics
Gate to Source Voltage V (V)
D
D
Typical Transfer Characteristics
Operation in
this area is
limited by R
DS(on)
V = –10 V
Pulse Test
Test Condition :
When using the aliminium Ceramic
board (12.5 x 20 x 70 mm)
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PDF描述 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ484WY(TL-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ484WYTL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ484WYTR-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ485 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ485TP | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 4A I(D) | TO-251VAR |
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