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參數(shù)資料
| 型號(hào)： | 2SJ484 |
| 廠(chǎng)商： | Hitachi,Ltd. |
| 英文描述： | Silicon P-Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅P溝道場(chǎng)效應(yīng)晶體管高速電源開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 5/9頁(yè) |
| 文件大?。?/td> | 43K |
| 代理商： | 2SJ484 |
2SJ484
5
–1.0
–0.8
–0.6
–0.4
–0.2
0
–4
–8
–12
–16
–20
2
1
0.1
–0.1 –0.2
0.5
–0.5
Drain Current I (A)
–1
–2
–5
–10
0.5
0.4
0.3
0.2
0.1
–40
0
40
80
120
160
0
0.1
0.05
5
2
1
0.5
0.2
–0.01–0.02
–0.2
–0.5 –1
–2
–5
I = –2 A
–1 A
–0.5 A
–20
0.2
V = –4 V
–10 V
–0.5, –1.0 A
V = –10 V
–0.1
–0.05
Drain Current I (A)
25
°
C
Tc = –25
°
C
75
°
C
Gate to Source Voltage V (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
D
D
D
R
D
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature Tc (
°
C)
R
D
S
Static Drain to Source on State Resistance
vs. Temperature
F
f
Forward Transfer Admittance vs.
Drain Current
Pulse Test
Pulse Test
Pulse Test
V = –10 V
Pulse Test
I = –2 A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ486 | RELAY-.5AMP-DC-6V/DIODE RoHS Compliant: Yes |
| 2SJ490 | TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 10A I(D) | TO-252 |
| 2SJ491 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SJ49 | LOW FREQUENCY POWER AMPLIFIER |
| 2SJ496 | Silicon P-Channel MOS FET High Speed Power Switching |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ484WY(TL-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ484WYTL-E | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ484WYTR-E | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ485 | 制造商:SANYO 制造商全稱(chēng):Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ485TP | 制造商:SANYO 制造商全稱(chēng):Sanyo Semicon Device 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 4A I(D) | TO-251VAR |
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