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參數(shù)資料
| 型號： | 2SJ484 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P-Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅P溝道場效應晶體管高速電源開關(guān) |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 43K |
| 代理商： | 2SJ484 |
2SJ484
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
*
1
I
DR
Pch*
2
–30
V
Gate to source voltage
±
20
V
Drain current
–2
A
Drain peak current
–4
A
Body to drain diode reverse drain current
–2
A
Channel dissipation
1
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Notes: 1. PW
≤
100
μ
s, duty cycle
≤
10 %
2. When using aluminium ceramic board (12.5 x 20 x 0.7 mm)
Tstg
–55 to +150
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ486 | RELAY-.5AMP-DC-6V/DIODE RoHS Compliant: Yes |
| 2SJ490 | TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 10A I(D) | TO-252 |
| 2SJ491 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SJ49 | LOW FREQUENCY POWER AMPLIFIER |
| 2SJ496 | Silicon P-Channel MOS FET High Speed Power Switching |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ484WY(TL-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ484WYTL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ484WYTR-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ485 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ485TP | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 4A I(D) | TO-251VAR |
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