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參數資料
| 型號： | 2SJ357 |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH |
| 中文描述： | P溝道MOS場效應晶體管的高速交換器 |
| 文件頁數： | 3/8頁 |
| 文件大?。?/td> | 64K |
| 代理商： | 2SJ357 |
2SJ357
3
Data Sheet D10803EJ3V0DS00
–10
–1
–8
–6
–4
–2
0
–2
–3
–4
–5
V
DS
– Drain to Source Voltage – V
I
D
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
–10
–1
–1
–0.1
–0.01
–2
–3
V
GS
– Gate to Source Voltage – V
I
D
TRANSFER CHARACTERISTICS
–4
–0.00001
–0.0001
–0.001
Pulsed
–0V
–45V
–4.0 V
–3.5 V
–3.0 V
–2.5 V
V
GS
= –2.0 V
T
A
= –25 °C
T
A
= 150 °C
T
A
= 0 °C
T
A
= 25 °C
T
A
= 75 °C
10
–0.001
I
D
– Drain Current – A
1
0.1
0.01
–0.01
–0.1
–1
|
f
|
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
–0.001
0.3
–0.01
–0.1
I
D
– Drain Current – A
R
D
–10
0
0.1
V
= –10 V
Pulsed
0.001
–0.0001
T
A
= 75 °C
T
A
= 25 °C
T
A
= 150 °C
T
A
= 0 °C
T
A
= –25 °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRINT
0.5
V
= –4 V
Pulsed
T
A
= 150 °C
–1
V
= –10 V
Pulsed
–0.01
0.3
0.1
–0.1
–1
–10
I
D
– Drain Current – A
R
D
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
V
= –10 V
Pulsed
0
–0.001
T
A
= 25 °C
0.2
T
A
= 0 °C
T
A
= –25 °C
T
A
= 150 °C
T
A
= 75 °C
0.2
0.4
–2
V
GS
– Gate to Source Voltage – V
R
D
0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
Pulsed
0.6
0.2
0.4
–4
–6
–8 –10 –12 –14 –16 –18 –20
I
D
= 1.5 A
I
D
= 3.0 A
T
A
= 25 °C
T
A
= –25 °C
T
A
= 0 °C
T
A
= 75 °C
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相關代理商/技術參數 |
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| 2SJ357-T1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 30V 3A 4-Pin(3+Tab) MP-2 T/R Cut Tape |
| 2SJ358 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH |
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| 2SJ360 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistors |
| 2SJ360(F) | 功能描述:MOSFET P-Ch 4-V gate drive RDS 0.55Ohm -60V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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