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參數(shù)資料
| 型號(hào)： | 2SJ357 |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH |
| 中文描述： | P溝道MOS場(chǎng)效應(yīng)晶體管的高速交換器 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 64K |
| 代理商： | 2SJ357 |
2SJ357
2
Data Sheet D10803EJ3V0DS00
ELECTRICAL SPECIFICATIONS (T
A
= +25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Drain Shut-down Current
I
DSS
V
DS
= –30 V, V
GS
= 0
–10
μ
A
Gate Leak Current
I
GSS
V
GS
= –16/+10 V, V
DS
= 0
–/+10
μ
A
Gate Cutoff Voltage
V
GS(off)
V
DS
= –10 V, I
D
= –1 mA
–1.0
–1.5
–2.0
V
Forward Transfer Admittance
|y
fs
|
V
DS
= –10 V, I
D
= –1.0 A
1.8
S
Drain-Source On-Resistance
R
DS(on)1
V
GS
= –4 V, I
D
= –1.5 A
0.23
0.35
Drain-Source On-Resistance
R
DS(on)2
V
GS
= –10 V, I
D
= –1.5 A
0.12
0.20
Input Capacitance
C
iss
V
DS
= –10 V, V
GS
= 0,
645
pF
Output Capacitance
C
oss
f = 1.0 MHz
500
pF
Feedback Capacitance
C
rss
275
pF
On-Time Delay
t
d(on)
V
DD
= –25 V, I
D
= –1.5 A
8
ns
Rise Time
t
r
V
GS(on)
= –10 V
R
G
= 10
, R
L
= 17
42
ns
Off-Time Delay
t
d(off)
145
ns
Fall Time
t
f
170
ns
Gate Input Charge
Q
G
V
DS
= –24 V,
V
GS
= –10 V,
25.1
nC
Gate-Source Chanrge
Q
GS
2.0
nC
Gate-Drain Charge
Q
GD
I
D
= –3.1 A, I
G
= –2 mA
9.8
nC
Internal Diode Reverse
Recovery Time
t
rr
I
F
= 3.0 A
di/dt = 50 A/
μ
s
112
ns
Internal Diode Reverse
Recovery Charge
Q
rr
106
nC
CHARACTERISTICS CURVES (T
A
= +25
°
C)
100
25
80
60
40
20
0
50
75
100
125
150
T
A
– Ambient Temperature – °C
d
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
–10
–1
–5
–2
–1
–0.5
–0.5
–2
–5
–10
–20
–100
V
DS
– Drain to Source Voltage – V
I
D
FORWARD BIAS SAFE OPERATING AREA
–50
–0.05
–0.1
–0.2
DS
Single Pulse
10ms
PW=100ms
1ms
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