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參數(shù)資料
| 型號(hào)： | 2SJ358 |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH |
| 中文描述： | P溝道MOS場效應(yīng)晶體管的高速交換器 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 97K |
| 代理商： | 2SJ358 |
Printed in Japan
MOS FIELD EFFECT TRANSISTOR
The 2SJ358 is a P-channel vertical MOS FET that can
be used as a switching element. The 2SJ358 can be
directly driven by an IC operating at 5 V.
The 2SJ358 features a low on-resistance and excellent
switching characteristics, and is suitable for applications
such as actuator driver and DC/DC converter.
FEATURES
New-type compact package
Has advantages of packages for small signals and for
power transistors, and compensates those disadvan-
tages
Can be directly driven by an IC operating at 5 V.
Low on-resistance
R
DS(ON)
= 0.40
MAX. @V
GS
= –4 V, I
D
= –1.5 A
R
DS(ON)
= 0.30
MAX. @V
GS
= –10 V, I
D
= –1.5 A
QUALITY GRADE
Standard
ABSOLUTE MAXIMUM RATINGS (T
a
= +25 C)
Parameter
Symbol
Conditions
Ratings
Unit
Drain-Source Voltage
V
DSS
V
GS
= 0
–60
V
Gate-Source Voltage
V
GSS
V
DS
= 0
–20/+10
V
Drain Current (DC)
I
D(DC)
–/+3.0
A
Drain Current (Pulse)
I
D(pulse)
PW
≤
10 ms
Duty Cycle
≤
1 %
–/+6.0
A
Total Power Loss
P
T
Mounted on ceramic board of 7.5 cm
2
×
0.7 mm
2.0
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
–55 to +150
C
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device is actually used, an additional protection circuit is externally required if a voltage exceeding the
rated voltage may be applied to this device.
Document No. TC-2491
(O.D. No. TC-8011)
Date Published October 1994 P
2SJ358
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH
The information in this document is subject to change without notice.
1994
DATA SHEET
Package Drawings (unit: mm)
Equivalent Circuit
5.7 ±0.1
2.0 ±0.2
1.5 ±0.1
2
3
1
4.2
2.1
1
0.4 ±0.05
5
3
0.5 ±0.1
0.85 ±0.1
0.5 ±0.1
0
Drain (D)
Gate (G)
Source (S)
Internal
Diode
Gate Protect
Diode
Marking: UA2
Electrode Connection
1. Source
2. Drain
3. Gate
Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by
NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2SJ358-T1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 3A 4-Pin(3+Tab) SC-62 T/R |
| 2SJ360 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistors |
| 2SJ360(F) | 功能描述:MOSFET P-Ch 4-V gate drive RDS 0.55Ohm -60V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SJ360(TE12L | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET P-CH 60V 1A 4-Pin(3+Tab) PW-Mini T/R |
| 2SJ360(TE12L,F) | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET P-CH 60V 1A 4PIN PW-MINI - Tape and Reel 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CH 60V 1A SC-62 制造商:Toshiba America Electronic Components 功能描述:MOSFET,Pch,60V/1A/0.73ohm,Pw-Mold |
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