參數(shù)資料
型號(hào): 2SJ317
廠商: Hitachi,Ltd.
英文描述: Silicon P-Channel MOS FET(P溝道MOSFET)
中文描述: 硅P溝道場(chǎng)效應(yīng)晶體管性(P溝道MOSFET的)
文件頁數(shù): 3/8頁
文件大?。?/td> 44K
代理商: 2SJ317
2SJ317
3
2.0
1.5
1.0
0.5
0
50
100
150
200
Ambient Temperature Ta (°C)
C
(
Maximun Power Dissipation Curve
2000
1000
500
200
100
50
20
–0.1 –0.2
–0.5 –1.0
–2
–5
–10
Reverse Drain Current I (A)
R
di/dt = 10 A/μs
V = 0
Reverse Recovery Time vs.
Reverse Drain Current
2000
1000
500
200
100
50
–0.05 –0.1 –0.2
–0.5
–1
–2
–5
Drain Current I (A)
S
td(on)
td(off)
tr
tf
Switching Time vs. Drain Current
V ..
V = –10 V
PW = 5 μs
Duty cycle 1 %
<
相關(guān)PDF資料
PDF描述
2SJ318L Silicon P-Channel MOS FET(P溝道MOSFET)
2SJ318 Silicon P-Channel MOS FET(P溝道MOSFET)
2SJ318S Silicon P-Channel MOS FET(P溝道MOSFET)
2SJ319L Silicon P-Channel MOS FET(P溝道MOSFET)
2SJ319 Silicon P-Channel MOS FET(P溝道MOSFET)
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