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參數(shù)資料
| 型號： | 2SJ317 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P-Channel MOS FET(P溝道MOSFET) |
| 中文描述： | 硅P溝道場效應(yīng)晶體管性（P溝道MOSFET的） |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 44K |
| 代理商： | 2SJ317 |
2SJ317
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
*
I
DR
Pch*
–12
V
Gate to source voltage
–7
V
Drain current
±2
A
Drain peak current
1
±4
A
Body to drain diode reverse drain current
2
A
Channel dissipation
2
1
W
Channel temperature
Tch
150
°C
Storage temperature
Notes 1. PW
≤
100 μs, duty cycle
≤
10%
2. Value on the alumina ceramic board (12.5
×
20
×
0.7 mm).
3. Marking is “NY”.
Tstg
–55 to +150
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
–12
—
—
V
I
D
= –1 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±7
—
—
V
I
G
= ±10 μA, V
DS
= 0
Gate to source cutoff current
I
GSS
—
—
±5
μA
V
GS
= ±6.5 V, V
DS
= 0
V
DS
= –8 V, V
GS
= 0
I
D
= –100 μA, V
DS
= –5 V
I
D
= –0.5 A*
I
D
= –1 A*
I
D
= –1 A*
V
DS
= –5 V, V
GS
= 0,
f = 1 MHz
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
—
—
–1
μA
V
GS(off)
R
DS(on)1
R
DS(on)2
|y
fs
|
Ciss
–0.4
—
–1.4
V
Static drain to source on state
—
0.4
0.7
S
1
, V
GS
= –2.2 V
resistance
—
0.28
0.35
1
, V
GS
= –4 V
Forward transfer admittance
1.0
2.3
—
1
, V
DS
= –5 V
Input capacitance
—
63
—
pF
Output capacitance
Coss
—
180
—
pF
Reverse transfer capacitance
Crss
—
23
—
pF
Turn-on time
t
on
t
off
—
500
—
ns
I
D
= –0.2 A*
R
L
= 51
1
, Vin = –4 V,
Turn-off time
Note
—
2860
—
ns
1. Pulse test
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PDF描述 |
|---|---|
| 2SJ318L | Silicon P-Channel MOS FET(P溝道MOSFET) |
| 2SJ318 | Silicon P-Channel MOS FET(P溝道MOSFET) |
| 2SJ318S | Silicon P-Channel MOS FET(P溝道MOSFET) |
| 2SJ319L | Silicon P-Channel MOS FET(P溝道MOSFET) |
| 2SJ319 | Silicon P-Channel MOS FET(P溝道MOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ317NY(TR-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ317NYTLE | 制造商:RENESAS 功能描述:RoHS COMPLIANT |
| 2SJ317NYTL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ317NYTR-E | 制造商:Renesas Electronics Corporation 功能描述:DISCRETES>TRANSISTOR>POWER MOSFETS |
| 2SJ318(L) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 20V V(BR)DSS | 5A I(D) | TO-251AA |
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