參數(shù)資料
型號: 2SC5975
廠商: Renesas Technology Corp.
英文描述: SILICON NPN EPITAXIAL HIGH FREQUENCY LOW NOISE AMPLIFIER / OSCILLATOR
中文描述: 硅外延npn型高頻低噪聲放大器/振蕩器
文件頁數(shù): 5/18頁
文件大?。?/td> 248K
代理商: 2SC5975
2SC5975
Rev.1.00, Jul.06.2004, page 5 of 17
Scale: 10 / div.
S
11
Parameter vs. Frequency
S
21
Parameter vs. Frequency
Scale: 0.1 / div.
S
12
Parameter vs. Frequency
.2
.4
.6
1
2
5
–10
–5
–3
–2
–1.5
10
5
3
2
1.5
–1
–.8
–.6
–.4
–.2
0
.2
.4
.6
.8
1
1.5
4
–4
3 4
.8
S
22
Parameter vs. Frequency
.2
.4
.6
1
2
5
–10
–5
–3
–2
–1.5
10
5
3
2
1.5
–1
–.8
–.6
–.4
–.2
0
.2
.4
.6
.8
1
1.5
4
–4
3 4
.8
Condition: VCE = 1 V , Zo = 50
100 to 5100 MHz (100 MHz step)
Condition: VCE = 1 V , Zo = 50
100 to 1000 MHz (100 MHz step)
1000 to 5100 MHz (200 MHz step)
IC = 5 mA
IC = 10 mA
IC = 20 mA
IC = 5 mA
IC = 10 mA
IC = 20 mA
Condition: VCE = 1 V , Zo = 50
100 to 5100 MHz (100 MHz step)
Condition: VCE = 1 V , Zo = 50
100 to 1000 MHz (100 MHz step)
1000 to 5100 MHz (200 MHz step)
IC = 5 mA
IC = 10 mA
IC = 20 mA
IC = 5 mA
IC = 10 mA
IC = 20 mA
0.1
0.2
0.3
0.4
0.5
50
40
30
20
10
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