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參數(shù)資料
| 型號： | 2SC5994 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications |
| 中文描述： | 瑞展硅晶體管大電流開關(guān)應(yīng)用 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 36K |
| 代理商： | 2SC5994 |
2SC5994
No.8035-1/4
Applications
Voltage regulators, relay drivers, lamp drivers, electrical equipment.
Features
Adoption of MBIT process.
High current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
Conditions
Ratings
Unit
V
V
V
V
A
A
mA
W
W
°
C
°
C
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
100
100
50
6
2
4
400
1.3
3.5
150
Collector Dissipation
PC
Mounted on a ceramic board (450mm
2
0.8m)
Tc=25
°
C
Junction Temperature
Storage Temperature
Tj
Tstg
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Collector Cutoff Current
Emitter Cutoff Current
ICBO
IEBO
hFE1
hFE2
VCB=50V, IE=0
VEB=4V, IC=0
VCE=2V, IC=100mA
VCE=2V, IC=1.5A
1
1
μ
A
μ
A
DC Current Gain
200
40
560
Marking : FJ
Continued on next page.
Ordering number : ENN8035
21505EA TS IM TB-00001137
2SC5994
NPN Epitaxial Planar Silicon Transistor
High-Current Switching Applications
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
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| 2SC6010 | Silicon NPN Triple Diffused Type |
| 2SC6011 | Audio Amplification Transistor |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5994-TD-E | 功能描述:兩極晶體管 - BJT BIP NPN 2A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5998YC-TL-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC6000 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High Speed Switching Applications DC-DC Converter Applications |
| 2SC6000(TE16L1,NQ) | 制造商:Toshiba America Electronic Components 功能描述:Transistor NPN 50V 7A hfe250-400 13ns |
| 2SC6010 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon NPN Triple Diffused Type |
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