參數(shù)資料
型號: 2SC6010
廠商: Toshiba Corporation
英文描述: Silicon NPN Triple Diffused Type
中文描述: 硅npn型三重擴散型
文件頁數(shù): 1/5頁
文件大?。?/td> 189K
代理商: 2SC6010
2SC6010
2006-11-13
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC6010
High Voltage Switching Applications
Switching Regulator Applications
DC-DC Converter Applications
High speed switching: t
f
= 0.24
μ
s (max) (I
C
= 0.3A)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V
CBO
600
V
Collector-emitter voltage
V
CEX
600
V
Collector-emitter voltage
V
CEO
285
V
Emitter-base voltage
V
EBO
8
V
DC
I
C
1.0
Collector current
Pulse
I
CP
2.0
A
Base current
I
B
0.5
A
Collector power
dissipation
Ta = 25°C
P
C
1.0
W
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-7D101A
Weight: g (typ.)
Base
Collector
Emitter
1.
2.
3.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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