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參數(shù)資料
| 型號(hào)： | 2SC6023 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | NPN Epitaxial Planar Silicon Transistor UHF to C Band Low-Noise Amplifier and OSC Applications |
| 中文描述： | 瑞展超高頻硅晶體管的C波段低噪聲放大器和OSC應(yīng)用 |
| 文件頁(yè)數(shù)： | 1/15頁(yè) |
| 文件大?。?/td> | 58K |
| 代理商： | 2SC6023 |
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2SC6023
No.8143-1/15
Features
Low-noise use
High cut-off frequency: fT=14.5GHz typ (VCE=1V).
: fT=22GHz typ (VCE=3V).
Low operating voltage.
High gain
:
S21e
2
=14dB typ (f=2GHz).
: NF=1.2dB typ (f=2GHz).
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Conditions
Ratings
Unit
V
V
V
mA
mW
°
C
°
C
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
9
3.5
2
35
120
150
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
ICBO
IEBO
hFE
fT1
fT2
Cre
S21e
S21e
NF
VCB=5V, IE=0
VEB=1V, IC=0
VCE=3V, IC=15mA
VCE=1V, IC=5mA
VCE=3V, IC=15mA
VCB=1V, f=1MHz
VCE=1V, IC=5mA, f=2GHz
VCE=3V, IC=15mA, f=2GHz
VCE=1V, IC=5mA, f=2GHz
1.0
μ
A
μ
A
1
80
160
Gain-Bandwidth Product
14.5
22
0.18
11
14
1.2
GHz
GHz
pF
dB
dB
dB
18
Reverse Transfer Capacitance
Forward Transfer Gain
2
1
9.5
2
2
Noise Figure
Marking : NF
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN8143
31005AB TS IM TB-00000431
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
2SC6023
NPN Epitaxial Planar Silicon Transistor
UHF to C Band Low-Noise Amplifier
and OSC Applications
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| 2SC6034 | Silicon NPN Triple Diffused Type |
| 2SC6036 | Silicon NPN epitaxial planar type |
| 2SC6040 | High-Speed and High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications |
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|---|---|
| 2SC6023-TR-E | 功能描述:TRANS NPN 3.5V 35MA MCP4 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF 晶體管 (BJT) 系列:- 產(chǎn)品變化通告:Product Discontinuation 17/Dec/2010 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發(fā)射極擊穿（最大）:4.7V 頻率 - 轉(zhuǎn)換:47GHz 噪聲系數(shù)（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD，扁平引線 供應(yīng)商設(shè)備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR |
| 2SC6024 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:UHF to C Band Low-Noise Amplifier and OSC Applications |
| 2SC6024-TL-E | 功能描述:TRANS NPN 3.5V 35MA 3SSFP RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF 晶體管 (BJT) 系列:- 產(chǎn)品變化通告:Product Discontinuation 17/Dec/2010 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發(fā)射極擊穿（最大）:4.7V 頻率 - 轉(zhuǎn)換:47GHz 噪聲系數(shù)（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD，扁平引線 供應(yīng)商設(shè)備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR |
| 2SC6025 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:NPN Epitaxial Planar Silicon Transistor UHF to C Band Low-Noise Amplifier and OSC Applications |
| 2SC6026 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon NPN Epitaxial Type (PCT Process) General-Purpose Amplifier Applications |
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