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參數(shù)資料
| 型號(hào)： | 2SC5993 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | For power amplification For TV VM circuit |
| 中文描述： | 1.5 A, 180 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | ROHS COMPLIANT, TO-220D-A1, FULL PACK-3 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 73K |
| 代理商： | 2SC5993 |
Power Transistors
2SC5993
Silicon NPN epitaxial planar type
1
Publication date: July 2004
SJD00320AED
For power amplification
For TV VM circuit
■
Features
Satisfactory linearity of forward current transfer ratio h
FE
High transition frequency (f
T
)
Full-pack package which can be installed to the heat sink with one
screw.
■
Absolute Maximum Ratings
T
C
=
25
°
C
■
Electrical Characteristics
T
C
=
25
°
C
±
3
°
C
1.4
±
0.2
1.6
±
0.2
0.8
±
0.1
0.55
±
0.15
2.54
±
0.30
5.08
±
0.50
1
2
3
2.6
±
0.1
2.9
±
0.2
4.6
±
0.2
φ
3.2
±
0.1
3
±
0
9.9
±
0.3
1
±
0
1
±
0
4
±
0
S
Unit: mm
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
180
V
Collector-emitter voltage (Base open)
V
CEO
180
V
Emitter-base voltage (Collector open)
V
EBO
I
C
6
V
Collector current
1.5
A
Peak collector current
I
CP
3
A
Collector power dissipation
P
C
20
W
T
a
=
25
°
C
2.0
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
V
CEO
I
C
=
10 mA, I
B
=
0
V
CB
=
180 V, I
E
=
0
V
EB
=
6 V, I
C
=
0
V
CE
= 5 V, I
C
= 0.1 A
I
C
=
1 A, I
B
=
0.1 A
V
CE
=
10 V, I
C
=
0.2 A, f
=
10 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
180
V
Collector-base cutoff current (Emitter open)
I
CBO
100
μ
A
μ
A
Emitter-base cutoff current (Collector open)
I
EBO
h
FE
100
Forward current transfer ratio
*
60
240
Collector-emitter saturation voltage
V
CE(sat)
0.5
V
Transition frequency
f
T
C
ob
130
MHz
Collector output capacitance
(Common base, input open circuited)
10
pF
Turn-on time
t
on
I
C
=
0.4 A, Resistance loaded
I
B1
=
0.04 A, I
B2
=
0.04 A
V
CC
=
100 V
0.1
μ
s
μ
s
μ
s
Storage time
t
stg
1.5
Fall time
t
f
0.1
Rank
Q
P
h
FE
60 to
140
120 to
240
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Internal Connection
B
C
E
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