參數(shù)資料
型號: 2N7000
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓60V,夾斷電流0.2A的N溝道增強型MOSFET晶體管)
中文描述: N溝道增強型MOSFET晶體管(最小漏源擊穿電壓60V的,夾斷電流0.2A的N溝道增強型MOSFET的晶體管)
文件頁數(shù): 4/6頁
文件大小: 86K
代理商: 2N7000
2N7000/7002, VQ1000J/P, BS170
4
Siliconix
S-52429—Rev. E, 28-Apr-97
Specifications
a
for VQ1000J/P and BS170
Limits
VQ1000J/P
BS170
Parameter
Symbol
Test Conditions
Typ
b
Min
Max
Min
Max
Unit
Switching
d
Turn-On Time
t
ON
7
10
Turn-Off Time
t
OFF
7
10
ns
Turn-On Time
t
ON
7
10
Turn-Off Time
t
OFF
7
10
Notes
a.
b.
c.
d.
T
A
= 25 C unless otherwise noted.
For DESIGN AID ONLY, not subject to production testing.
Pulse test: PW
80 s duty cycle
Switching time is essentially independent of operating temperature.
VNBF06
1%.
Typical Characteristics (25 C Unless Otherwise Noted)
0
0.2
0.4
0.6
0.8
1.0
0
1
2
3
4
5
6
0
0.2
0.4
0.6
0.8
1.0
0
1
2
3
4
5
6
7
8
Output Characteristics
Transfer Characteristics
V
DS
– Drain-to-Source Voltage (V)
I
D
V
GS
= 10, 9, 8, 7 V
6.5 V
V
GS
– Gate-to-Source Voltage (V)
I
D
T
A
= –55 C
25 C
125 C
6 V
5.5 V
5 V
4.5 V
4 V
3.5 V
3 V
2.5 V
2, 1 V
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