參數(shù)資料
型號(hào)： 2N7000
廠商： Vishay Intertechnology,Inc.
英文描述： N-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓60V,夾斷電流0.2A的N溝道增強(qiáng)型MOSFET晶體管)
中文描述： N溝道增強(qiáng)型MOSFET晶體管（最小漏源擊穿電壓60V的，夾斷電流0.2A的N溝道增強(qiáng)型MOSFET的晶體管）
文件頁(yè)數(shù)： 3/6頁(yè)
文件大小： 86K
代理商： 2N7000
2N7000/7002, VQ1000J/P, BS170
Siliconix
S-52429—Rev. E, 28-Apr-97
3
Specifications
a
for 2N7000 and 2N7002
Limits
2N7000
2N7002
Parameter
Symbol
Test Conditions
Typ
b
Min
Max
Min
Max
Unit
Switching
e
Turn-On Time
t
ON
7
10
Turn-Off Time
t
OFF
7
10
ns
Turn-On Time
t
ON
7
20
Turn-Off Time
t
OFF
11
20
Notes
a.
b.
c.
d.
e.
T
A
= 25 C unless otherwise noted.d.
For DESIGN AID ONLY, not subject to production testing.
Pulse test: PW
80 s duty cycle
This parameter not registered with JEDEC.
Switching time is essentially independent of operating temperature.
VNBF06
1%.
Specifications
a
for VQ1000J/P and BS170
Limits
VQ1000J/P
BS170
Parameter
Symbol
Test Conditions
Typ
b
Min
Max
Min
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS(th)
V
GS
= 0 V, I
D
= 100 A
V
DS
= V
GS
, I
D
= 1 mA
70
60
60
V
Gate-Threshold Voltage
2.1
0.8
2.5
0.8
3
V
DS
= 0 V, V
GS
=
10 V
100
Gate-Body Leakage
I
GSS
= 125 C
500
nA
V
DS
= 0 V, V
GS
=
V
DS
= 25 V, V
GS
= 0 V
V
DS
= 48 V, V
GS
= 0 V,
V
DS
= 60 V, V
GS
= 0 V
V
DS
= 10 V, V
GS
=
V
GS
= 5 V, I
D
=
V
GS
=
V
GS
=
15 V
10
0.5
Zero Gate Voltage Drain Current
I
DSS
= 125 C
500
A
10
On-State Drain Current
c
I
D(on)
V
1
0.5
A
A
4
7.5
Drain Source On Resistance
Drain-Source On-Resistance
c
r
DS(on)
V, I
D
=
V, I
D
=
A
2.3
5
A
2.3
5.5
= 125 C
4.2
7.6
Forward Transconductance
c
g
fs
V
DS
= 10 V, I
D
=
V
DS
= 10 V, I
D
=
V
DS
=5 V, I
D
= 0.05 A
A
100
A
100
mS
Common Source Output Conductance
c
g
os
0.5
Dynamic
Input Capacitance
C
iss
C
oss
C
rss
V
DS
=25 V V
GS
= 0 V
f = 1 MHz
f 1 MHz
22
60
60
Output Capacitance
11
25
pF
Reverse Transfer Capacitance
2
5
相關(guān)PDF資料
PDF描述
2N7002 N-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓60V,夾斷電流0.115A的N溝道增強(qiáng)型MOSFET晶體管)
2N7002DW-7-F DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
2N7002E-7-F N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
2N7002K-7 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
2N7002K N-Ch; 60V (DS) MOSFET; add ESD protect function
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N-7000 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2N7000 AMO 功能描述:MOSFET TRENCH 31V-99V G2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2N7000,126 功能描述:MOSFET TRENCH 31V-99V G2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2N7000 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N LOGIC TO-92
2N7000/D 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:Small Signal MOSFET 200 mAmps， 60 Volts
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