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參數(shù)資料
| 型號(hào)： | 2N7000 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓60V,夾斷電流0.2A的N溝道增強(qiáng)型MOSFET晶體管) |
| 中文描述： | N溝道增強(qiáng)型MOSFET晶體管（最小漏源擊穿電壓60V的，夾斷電流0.2A的N溝道增強(qiáng)型MOSFET的晶體管） |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 86K |
| 代理商： | 2N7000 |
2N7000/7002, VQ1000J/P, BS170
Siliconix
S-52429—Rev. E, 28-Apr-97
1
N-Channel Enhancement-Mode MOSFET Transistors
Product Summary
Part Number
V
(BR)DSS
Min (V)
r
DS(on)
Max ( )
V
GS(th)
(V)
I
D
(A)
2N7000
5 @ V
GS
= 10 V
0.8 to 3
0.2
2N7002
7.5 @ V
GS
= 10 V
1 to 2.5
0.115
VQ1000J
60
5.5 @ V
GS
= 10 V
0.8 to 2.5
0.225
VQ1000P
5.5 @ V
GS
= 10 V
0.8 to 2.5
0.225
BS170
5 @ V
GS
= 10 V
0.8 to 3
0.5
Features
Benefits
Applications
Low On-Resistance: 2.5
Low Threshold: 2.1 V
Low Input Capacitance: 22 pF
Fast Switching Speed: 7 ns
Low Input and Output Leakage
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error Voltage
Direct Logic-Level Interface: TTL/CMOS
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
Battery Operated Systems
Solid-State Relays
2N7002 (72)*
*Marking Code for TO-236
TO-226AA
(TO-92)
Top View
2N7000
S
D
G
1
2
3
G
TO-236
(SOT-23)
S
D
Top View
2
3
1
Plastic: VQ1000J
Sidebraze: VQ1000P
Top View
TO-92-18RM
(TO-18 Lead Form)
D
S
G
1
2
3
BS170
1
2
3
4
5
6
7
14
13
12
11
10
9
8
Top View
Dual-In-Line
D
1
D
4
S
1
S
4
G
1
G
4
NC
NC
G
2
G
3
S
2
S
3
D
2
D
3
N
N
N
N
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70226.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N7002 | N-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓60V,夾斷電流0.115A的N溝道增強(qiáng)型MOSFET晶體管) |
| 2N7002DW-7-F | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 2N7002E-7-F | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 2N7002K-7 | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 2N7002K | N-Ch; 60V (DS) MOSFET; add ESD protect function |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N-7000 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2N7000 AMO | 功能描述:MOSFET TRENCH 31V-99V G2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7000,126 | 功能描述:MOSFET TRENCH 31V-99V G2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7000 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N LOGIC TO-92 |
| 2N7000/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Small Signal MOSFET 200 mAmps， 60 Volts |
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