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參數(shù)資料
| 型號： | 2N5685 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | High-Current Complementary Silicon Power Transistor(50A，300W，60V（集電極-發(fā)射極），大電流，補償型硅NPN功率晶體管) |
| 中文描述： | 50 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-204AE |
| 封裝： | CASE 197A-05, 2 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 126K |
| 代理商： | 2N5685 |
2N5684 2N5685 2N5686
http://onsemi.com
4
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.7
0.5
0.01
0.02
0.3
0.2
0.1
0.07
0.05
0.03
0.02
r
R
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
2000
500
θ
JC
(t) = r(t)
θ
JC
θ
JC
= 0.584
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
θ
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D = 0.5
0.05
0.02
0.01
SINGLE PULSE
0.1
1000
0.2
100
1.0
Figure 5. Active–Region Safe Operating Area
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
50
20
10
5.0
0.1
2.0
3.0
7.0
10
20
30
50
100
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED @ T
C
= 25
°
C
(SINGLE PULSE)
CURVES APPLY BELOW
RATED V
CEO
70
2.0
I
T
J
= 200
°
C
dc
1.0 ms
500
μ
s
1.0
0.5
0.2
5.0
2N5683, 2N5685
100
μ
s
5.0 ms
2N5684, 2N5686
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
– V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 200 C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
200 C. T
J(pk)
may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
4.0
0.5
Figure 6. Turn–Off Time
I
C
, COLLECTOR CURRENT (AMP)
2.0
1.0
0.8
0.6
0.4
0.2
0.7
1.0
2.0
3.0
7.0
20
50
T
J
= 25
°
C
I
B1
= I
B2
I
C
/I
B
= 10
V
CE
= 30 V
0.3
t
t
s
5.0
5000
0.1
Figure 7. Capacitance
V
R
, REVERSE VOLTAGE (VOLTS)
500
2.0
5.0
10
20
100
50
0.2
0.5
1.0
C3000
1000
700
T
J
= 25
°
C
3.0
30
2000
10
2N5684 (PNP)
2N5685, 2N5686 (NPN)
t
f
C
ib
2N5684 (PNP)
2N5685, 2N5686 (NPN)
C
ob
C
ob
C
ib
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5685_1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:NPN POWER SILICON TRANSISTOR |
| 2N5686 | 功能描述:兩極晶體管 - BJT 50A 80V 300W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5686 | 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR |
| 2N5686G | 功能描述:兩極晶體管 - BJT 50A 80V 300W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5686JTX | 制造商:MILITARY SPECIFICATIONS P 功能描述: |
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