- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371465 > 2N5685 (ON SEMICONDUCTOR) High-Current Complementary Silicon Power Transistor(50A，300W，60V（集電極-發(fā)射極），大電流，補(bǔ)償型硅NPN功率晶體管) PDF資料下載
參數(shù)資料
| 型號(hào)： | 2N5685 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | High-Current Complementary Silicon Power Transistor(50A，300W，60V（集電極-發(fā)射極），大電流，補(bǔ)償型硅NPN功率晶體管) |
| 中文描述： | 50 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-204AE |
| 封裝： | CASE 197A-05, 2 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 126K |
| 代理商： | 2N5685 |
High-Current Complementary
Silicon Power Transistors
. . . designed for use in high–power amplifier and switching circuit
applications.
High Current Capability —
I
C
Continuous = 50 Amperes.
DC Current Gain —
h
FE
= 15–60 @ I
C
= 25 Adc
Low Collector–Emitter Saturation Voltage —
V
CE(sat)
= 1.0 Vdc (Max) @ I
C
= 25 Adc
(1) Indicates JEDEC Registered Data.
MAXIMUM RATINGS (1)
2N5684
Derate above 25 C
1.715
W/ C
Watts
Temperature Range
THERMAL CHARACTERISTICS (1)
Characteristic
Thermal Resistance, Junction to Case
Symbol
θ
Max
Unit
0.584
C/W
300
00
20
40
60
80
100
120
140
160
180
200
Figure 1. Power Derating
TEMPERATURE (
°
C)
P
250
150
100
50
200
Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed.
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
Semiconductor Components Industries, LLC, 2001
January, 2001 – Rev. 8
1
Publication Order Number:
2N5684/D
2N5684
NPN
2N5685
2N5686
*ON Semiconductor Preferred Device
50 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60–80 VOLTS
300 WATTS
*
CASE 197A–05
TO–204AE
PNP
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N5744 | TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 20A I(C) | TO-66 |
| 2N5745X | 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset |
| 2N5755 | TRIAC|200V V(DRM)|2.5A I(T)RMS|TO-5 |
| 2N5770 | NPN RF Transistor(NPN射頻晶體管) |
| 2N5777(MOD.) | PHOTOTRANSISTOR | DARLINGTON | 250M | TO-92VAR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5685_1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:NPN POWER SILICON TRANSISTOR |
| 2N5686 | 功能描述:兩極晶體管 - BJT 50A 80V 300W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5686 | 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR |
| 2N5686G | 功能描述:兩極晶體管 - BJT 50A 80V 300W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5686JTX | 制造商:MILITARY SPECIFICATIONS P 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。