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參數(shù)資料
| 型號： | 28F400BV-TB |
| 廠商： | Intel Corp. |
| 英文描述： | 4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| 中文描述： | 4兆位（256 × 16，為512k × 8）SmartVoltage啟動塊閃存系列 |
| 文件頁數(shù)： | 24/49頁 |
| 文件大?。?/td> | 427K |
| 代理商： | 28F400BV-TB |
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SMART 3 ADVANCED BOOT BLOCK
–WORD-WIDE
E
24
PRELIMINARY
Start
Write 20H
Write D0H and
Block Address
Read Status Register
SR.7 =
Full Status
Check if Desired
Block Erase Complete
FULL STATUS CHECK PROCEDURE
Bus Operation
Write
Write
Standby
Repeat for subsequent block erasures.
Full Status Check can be done after each block erase or after a sequence of
block erasures.
Write FFH after the last write operation to reset device to read array mode.
Bus Operation
Standby
SR. 1 and 3 MUST be cleared, if set during an erase attempt, before further
attempts are allowed by the Write State Machine.
SR.1, 3, 4, 5 are only cleared by the Clear Staus Register Command, in cases
where multiple bytes are erased before full status is checked.
If an error is detected, clear the status register before attempting retry or other
error recovery.
No
Yes
Suspend Erase
Suspend
Erase Loop
1
0
Standby
Command
Erase Setup
Erase Confirm
Comments
Data = 20H
Addr = Within Block to Be
Erased
Data = D0H
Addr = Within Block to Be
Erased
Check SR.7
1 = WSM Ready
0 = WSM Busy
Command
Comments
Check SR.3
1 = V
PP
Low Detect
Check SR.4,5
Both 1 = Command Sequence
Error
Read Status Register
Data (See Above)
V
PP
Range Error
Command Sequence
Error
Block Erase
Successful
SR.3 =
SR.4,5 =
1
0
1
0
Block Erase Error
SR.5 =
1
0
Attempted Erase of
Locked Block - Aborted
SR.1 =
1
0
Read
Status Register Data Toggle
CE# or OE# to Update Status
Register Data
Standby
Check SR.5
1 = Block Erase Error
Standby
Check SR.1
1 = Attempted Erase of
Locked Block - Erase Aborted
0580_09
Figure 9. Automated Block Erase Flowchart
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 28F400BX-TB | 4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| 28F410-100M1 | 4M-BIT (512K X 8) CMOS FLASH MEMORY |
| 28F512 | 512K(64Kx8)CMOS FLASH MEMORY |
| 28F640C3 | 3 Volt Advanced Boot Block Flash Memory(3 V 高級快速引導(dǎo)塊閃速存儲器) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28F400BX-B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4-MBIT (256K X 16. 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| 28F400BX-T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4-MBIT (256K X 16. 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| 28F400BX-T/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 28F400BX-TB | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| 28F400BX-TL/BL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
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