參數(shù)資料
型號: 28F200BX-TB
廠商: Intel Corp.
英文描述: 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
中文描述: 2兆位(128K的× 16,256K × 8)啟動塊閃存系列
文件頁數(shù): 46/55頁
文件大?。?/td> 636K
代理商: 28F200BX-TB
2-MBIT SmartVoltage BOOT BLOCK FAMILY
E
46
SEE NEW DESIGN RECOMMENDATIONS
4.11
DC Characteristics
—Extended Temperature Operations
(Continued)
Prod
TBV-80
TBV-80
TBE-120
Sym
Parameter
V
CC
3.3 ± 0.3 V
5 V ± 10%
Unit
Test Conditions
Note
Typ
Max
Typ
Max
I
CCW
V
CC
Program Current
for Word or Byte
1,4
13
30
30
50
mA
V
PP
= V
PPH
1 (at 5 V)
Program in Progress
V
= V
2 (at 12 V)
Program in Progress
V
= V
1 (at 5 V)
Block Erase in
Progress
V
= V
2 (at 12 V)
Block Erase in
Progress
10
25
30
45
mA
I
CCE
V
CC
Erase Current
1,4
13
30
22
45
mA
10
25
18
40
mA
I
CCES
V
CC
Erase Suspend
Current
1,2
3
8.0
5
12.0
mA
CE# = V
Block Erase Suspend
V
PP
= V
PPH
1 (at 5 V)
I
PPS
V
PP
Standby Current
1
± 5
± 15
± 5
± 15
μA
V
PP
< V
PPH
2
I
PPD
V
PP
Deep Power-Down
Current
V
PP
Read Current
1
0.2
10
0.2
10
μA
RP# = GND ± 0.2 V
I
PPR
1
50
200
50
200
μA
V
PP
V
PPH
2
I
PPW
V
PP
Program Current
for Word or Byte
1,4
13
30
13
30
mA
V
PP
= V
PPH
1 (at 5 V)
8
25
8
25
mA
V
PP
= V
PPH
2 (at 12 V)
I
PPE
V
PP
Erase Current
1,4
13
30
15
25
mA
V
PP
= V
PPH
1 (at 5 V)
Block Erase in
Progress
V
PP
= V
PPH
2 (at 12 V)
Block Erase in
Progress
V
PP
= V
PPH
Block Erase Suspend
in Progress
RP# = V
HH
V
PP
= 12 V
8
25
10
20
mA
I
PPES
V
PP
Erase Suspend
Current
1
50
200
50
200
μA
I
RP#
RP# Boot Block Unlock
Current
1,4
500
500
μA
I
ID
A
9
Intelligent Identifier
Current
1,4
500
500
μA
A
9
= V
ID
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