參數資料
型號: 28F200BX-TB
廠商: Intel Corp.
英文描述: 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
中文描述: 2兆位(128K的× 16,256K × 8)啟動塊閃存系列
文件頁數: 45/55頁
文件大?。?/td> 636K
代理商: 28F200BX-TB
E
4.11
2-MBIT SmartVoltage BOOT BLOCK FAMILY
45
SEE NEW DESIGN RECOMMENDATIONS
DC Characteristics
—Extended Temperature Operations
Prod
TBV-80
TBV-80
TBE-120
Sym
Parameter
V
CC
3.3 ± 0.3 V
5 V ± 10%
Unit
Test Conditions
Notes
Typ
Max
Typ
Max
I
IL
Input Load Current
1
± 1.0
± 1.0
μA
V
CC
= V
CC
Max
V
IN
= V
CC
or GND
V
CC
= V
CC
Max
V
IN
= V
CC
or GND
CMOS Levels
V
CC
= V
CC
Max
CE# = RP# = WP# =
V
CC
± 0.2 V
I
LO
Output Leakage Current
1
± 10
± 10
μA
I
CCS
V
CC
Standby Current
1,3
60
110
70
150
μA
0.4
1.5
0.8
2.5
mA
TTL Levels
V
CC
= V
CC
Max
CE# = RP# = BYTE#
= V
IH
V
CC
= V
CC
Max
V
IN
= V
CC
or GND
RP# = GND ± 0.2 V
CMOS INPUTS
V
CC
= V
CC
Max
CE = V
IL
f = 10 MHz
(5 V)
5 MHz (3.3 V)
I
OUT
= 0 mA
Inputs = GND ± 0.2 V
or V
CC
± 0.2 V
I
CCD
V
CC
Deep Power-Down
Current
1
0.2
8
0.2
8
μA
I
CCR
V
CC
Read Current for
Word or Byte
1,5,6
15
30
50
65
mA
15
30
55
70
mA
TTL INPUTS
V
CC
= V
CC
Max
CE# = V
IL
f = 10 MHz (5 V)
5 MHz (3.3 V)
I
OUT
= 0 mA
Inputs = V
IL
or V
IH
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PDF描述
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