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參數(shù)資料
| 型號(hào)： | 28F200BX-B |
| 廠商： | Intel Corp. |
| 英文描述： | 5V or Adjustable, Low-Voltage, Step-Up DC-DC Controller |
| 中文描述： | 28F200BX - B組- 2兆位（128K的× 16。256K × 8）啟動(dòng)塊閃存系列 |
| 文件頁(yè)數(shù)： | 29/55頁(yè) |
| 文件大?。?/td> | 636K |
| 代理商： | 28F200BX-B |
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E
4.2.1
2-MBIT SmartVoltage BOOT BLOCK FAMILY
29
SEE NEW DESIGN RECOMMENDATIONS
APPLYING VCC VOLTAGES
When applying V
CC
voltage to the device, a delay
may be required before initiating device operation,
depending on the V
CC
ramp rate. If V
CC
ramps
slower than 1V/100 μs (0.01 V/μs) then no delay is
required. If V
CC
ramps faster than 1V/100 μs (0.01
V/μs), then a delay of 2 μs is required before
initiating device operation. RP# = GND is
recommended during power-up to protect against
spurious write signals when V
CC
is between V
LKO
and V
CCMIN
.
V
CC
Ramp Rate
Required Timing
≤
1V/100
μ
s
No delay required.
> 1V/100
μ
s
A delay time of 2
μ
s is required before any device operation is initiated, including read
operations, command writes, program operations, and erase operations. This delay
is
measured beginning from the time V
CC
reaches V
CCMIN
(3.0 V for 3.3
±
0.3 V operation;
and 4.5 V for 5 V operation).
NOTES:
1.
2.
These requirements must be strictly followed to guarantee all other read and write specifications.
To switch between 3.3 V and 5 V operation, the system should first transition V
from the existing voltage range to GND,
and then to the new voltage. Any time the V
CC
supply drops below V
CCMIN
, the chip may be reset, aborting any operations
pending or in progress.
These guidelines must be followed for any V
CC
transition from GND.
3.
4.3
T
A
= 25 °C, f = 1 MHz
Capacitance
Symbol
Parameter
Note
Typ
Max
Unit
Conditions
C
IN
Input Capacitance
1
6
8
pF
V
IN
= 0 V
C
OUT
Output Capacitance
1, 2
10
12
pF
V
OUT
= 0 V
NOTES:
1. Sampled, not 100% tested.
2. For the 28F002B, address pin A
10
follows the C
OUT
capacitance numbers.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 28F200BX-T | Evaluation Kit for the MAX608 |
| 28F200BL-TB | 2-MBIT (128K x 16, 256K x 8)LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
| 28F3204W30 | 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) |
| 28F320W30 | 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) |
| 28F6408W30 | 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28F200BX-T | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F200BX-T - 2-MBIT (128K x 16. 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| 28F200BX-T/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 28F200BX-TB | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| 28F200BX-TL/BL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 28F200CV-B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
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