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參數(shù)資料
| 型號(hào)： | 28F160S5 |
| 廠商： | Intel Corp. |
| 英文描述： | 5 V FlashFile Memory(5 V FlashFile 存儲(chǔ)器) |
| 中文描述： | 5伏FlashFile內(nèi)存（5伏FlashFile存儲(chǔ)器） |
| 文件頁(yè)數(shù)： | 46/51頁(yè) |
| 文件大小： | 320K |
| 代理商： | 28F160S5 |
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28F160S5/28F320S5
E
46
PRELIMINARY
6.6
AC Characteristics
—Write Operations
(1, 6)
T
A
=
–40
o
C to +85
o
C (Extended) and T
A
= 0 °C to +70 °C (Commercial)
Versions
(6)
5 V ± 5%
5 V ± 10% V
CC
Valid for All
Speeds
#
Sym
Parameter
Notes
Min
Max
Unit
W1
t
PHWL
(t
PHEL
)
RP# High Recovery to WE# (CE
X
# ) Going Low
2
1
μs
W2
t
ELWL
CE
X
# Setup to WE# Going Low
10
ns
(t
WLEL
)
(WE# Setup to CE
X
# Going Low)
0
ns
W3
t
WLWH
WE# Pulse Width
40
ns
(t
ELEH
)
(CE
X
# Pulse Width)
50
ns
W4
t
DVWH
(t
DVEH
)
Data Setup to WE# (CE
X
# ) Going High
3
40
ns
W5
t
AVWH
(t
AVEH
)
Address Setup to WE# (CE
X
# ) Going High
3
40
ns
W6
t
WHEH
CE
X
# Hold from WE# High
10
ns
(t
EHWH
)
(WE# Hold from CE
X
# High)
0
ns
W7
t
WHDX
(t
EHDX
)
Data Hold from WE# (CE
X
# ) High
5
ns
W8
t
WHAX
(t
EHAX
)
Address Hold from WE# (CE
X
# ) High
5
ns
W9
t
WHWL
WE# Pulse Width High
30
ns
(t
EHEL
)
(CE
X
# Pulse Width High)
25
ns
W10
t
SHWH
(t
SHEH
)
WP# V
IH
Setup to WE# (CE
X
# ) Going High
100
ns
W11
t
VPWH
(t
VPEH
)
V
PP
Setup to WE# (CE
X
# ) Going High
2
100
ns
W12
t
WHGL
(t
EHGL
)
Write Recovery before Read
0
ns
W13
t
WHRL
(t
EHRL
)
WE# High to STS in RY/BY# Low
90
ns
W14
t
QVSL
WP# V
IH
Hold from Valid SRD
2,4
0
ns
W15
t
QVVL
V
PP
Hold from Valid SRD, STS in RY/BY# High
2,4
0
ns
NOTES:
1.
Read timing characteristics during block erase, program, and lock-bit configuration operations are the same as during
read-only operations. Refer to AC Characteristics
—Read-Only Operations
.
Sampled, not 100% tested.
Refer to Table 3 for valid A
IN
and D
IN
for block erase, program, or lock-bit configuration.
V
PP
should be at V
PPH
until determination of block erase, program, or lock-bit configuration success (SR.1/3/4/5 = 0).
See
Ordering Information
for device speeds (valid operational combinations).
See Figures 13 through 15 for testing characteristics.
2.
3.
4.
5.
6.
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