- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371435 > 28F160S5 (Intel Corp.) 5 V FlashFile Memory(5 V FlashFile 存儲(chǔ)器) PDF資料下載
參數(shù)資料
| 型號(hào)： | 28F160S5 |
| 廠商： | Intel Corp. |
| 英文描述： | 5 V FlashFile Memory(5 V FlashFile 存儲(chǔ)器) |
| 中文描述： | 5伏FlashFile內(nèi)存（5伏FlashFile存儲(chǔ)器） |
| 文件頁(yè)數(shù)： | 24/51頁(yè) |
| 文件大小： | 320K |
| 代理商： | 28F160S5 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)當(dāng)前第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)
28F160S5/28F320S5
E
24
PRELIMINARY
Table 11. Primary-Vendor Specific Extended Query
(Continued)
Offset
Length
(bytes)
Description
Data
(P+C)h
01h
V
CC
Logic Supply Optimum Program/Erase voltage
(highest performance)
bits 7
–4
bits 3–0
BCD value in volts
BCD value in 100 mv
3D:
0050h
(P+D)h
01h
V
PP
[Programming] Supply Optimum Program/Erase
voltage
bits 7–4
bits 3–0
HEX value in volts
BCD value in 100 mv
3E:
0050h
(P+E)h
reserved
Reserved for future use
Table 12. Identifier Codes
Code
Address
(2)
000000
000001
000001
X
0002
(1)
Data
B0
D0
D4
Manufacturer Code
Device Code
16 Mbit
32 Mbit
Block Lock Configuration
Block Is Unlocked
Block Is Locked
Reserved for Future Use
Block Erase Status
Last erase completed
successfully
Last erase did not
complete successfully
Reserved for Future Use
NOTES:
1.
X selects the specific block lock configuration code.
See Figure 5 for the device identifier code memory
map.
2.
A
should be ignored in this address. The lowest order
address line is A
1
in both word and byte mode.
DQ
0
= 0
DQ
0
= 1
DQ
2
–7
x0002
(1)
DQ
1
= 0
DQ
1
= 1
DQ
2–7
4.3
Read Identifier Codes
Command
The identifier code operation is initiated by writing
the Read Identifier Codes command. Following the
command write, read cycles from addresses shown
in Figure 5 retrieve the manufacturer, device, block
lock configuration, and block erase status codes
(see Table 12 for identifier code values). To
terminate the operation, write another valid
command. Like the Read Array command, the
Read
Identifier
Codes
independently of the V
voltage. Following the
Read Identifier Codes command, the information in
Table 12 can be read.
command
functions
4.4
Read Status Register
Command
The status register may be read to determine when
programming,
block
configuration is complete and whether the operation
completed successfully. It may be read at any time
by writing the Read Status Register command.
After writing this command, all subsequent read
operations output data from the status register until
another valid command is written. The status
register contents are latched on the falling edge of
OE#, CE
0
#, or CE
1
# whichever occurs last. OE# or
CE
X
# must toggle to V
IH
to update the status
register latch. The Read Status Register command
functions independently of the V
PP
voltage.
erasure,
or
lock-bit
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 28F320S5 | 3 V、32MB FlashFile Memory(3 V、32M位FlashFile 存儲(chǔ)器) |
| 28F200B5 | 5V Boot Block Flash Memory(5 V 引導(dǎo)塊閃速存儲(chǔ)器) |
| 28F200BV-TB | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| 28F200BX | 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| 28F200BX-TB | 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28F1697 | 制造商:GE 功能描述:OF769X8000 |
| 28F1920 | 制造商:General Electric Company 功能描述:Capacitor - 20uF 330ac/600dcV 10% |
| 28F2001BX-T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 28F200B5 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT |
| 28F200BL-B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2-MBIT (128K x 16. 256K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。