參數(shù)資料
型號(hào)： 28F160S3
廠商： Intel Corp.
英文描述： 3 V FlashFile Memory(3 V FlashFile 存儲(chǔ)器)
中文描述： 3伏FlashFile內(nèi)存（3伏FlashFile存儲(chǔ)器）
文件頁(yè)數(shù)： 50/53頁(yè)
文件大?。?/td> 331K
代理商： 28F160S3
28F160S3/28F320S3
E
50
PRELIMINARY
6.7
Erase, Write, and Lock-Bit Configuration Performance
(3, 4)
2.7 V
–3.6 V V
CC
Version
2.7 V V
PP
3.3 V V
PP
5 V V
PP
#
Sym
Parameter
Note Typ
(1)
Max
(6)
Typ
(1)
Max
(6)
Typ
(1)
Max
(6)
Unit
W16
Byte/word program time
(using write buffer)
5
5.76
TBD
5.76
TBD
2.76
TBD
μs
-
W16
t
WHQV1
t
EHQV1
Per byte program time
(without write buffer)
2
18.0
160
17.0
150
12.0
100
μs
W16 t
WHQV1
t
EHQV1
Per word program time
(without write buffer)
2
20.0
190
19.0
180
12.0
100
μs
W16
Block program time
(byte mode)
2
1.2
2.0
1.1
1.7
0.87
1.2
sec
W16
Block program time
(word mode)
2
0.7
1.1
0.6
1.0
0.44
0.6
sec
W16
Block program time
(using write buffer)
2
0.37
TBD
0.37
TBD
0.16
TBD
sec
W16 t
WHQV2
t
EHQV2
Block erase time
2
0.56
6.0
0.35
4.0
0.3
3.5
sec
W16
Full chip erase time
16 Mbit
17.9
192
12.0
128
9.6
112
sec
32 Mbit
35.8
384
24.0
256
19.2
224
sec
W16 t
WHQV3
t
EHQV3
Set Lock-Bit time
2
20.0
190
19.0
180
12.0
100
μs
W16 t
WHQV4
t
EHQV4
Clear block lock-bits time
2
0.56
6.0
0.35
4.0
0.3
3.5
sec
W16 t
WHRH1
t
EHRH1
Program suspend latency
time to read
7.24
10.2
7.24
10.2
6.73
9.48
μs
W16 t
WHRH2
t
EHRH2
Erase suspend latency time
to read
15.5
21.5
15.5
21.5
12.54
17.54
μs
NOTES:
1.
Typical values measured at T
= +25 °C and nominal voltages. Assumes corresponding lock-bits are not set. Subject to
change based on device characterization.
Excludes system-level overhead.
These performance numbers are valid for all speed versions.
Sampled but not 100% tested.
Uses whole buffer.
Maximum values represent less than 1% of units exposed to greater than 100K cycles.
2.
3.
4.
5.
6.
相關(guān)PDF資料
PDF描述
28F320S3 3 V、32MB FlashFile Memory(3 V、32M位FlashFile 存儲(chǔ)器)
28F160S5 5 V FlashFile Memory(5 V FlashFile 存儲(chǔ)器)
28F320S5 3 V、32MB FlashFile Memory(3 V、32M位FlashFile 存儲(chǔ)器)
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