參數(shù)資料
型號： 28F016SV
廠商： Intel Corp.
英文描述： 16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY
中文描述： 16兆位（1兆比特× 16，2兆比特× 8）FlashFile記憶
文件頁數(shù)： 4/48頁
文件大?。?/td> 304K
代理商： 28F016SV
SMART 3 ADVANCED BOOT BLOCK
E
4
PRELIMINARY
REVISION HISTORY
Number
Description
-001
Original version
-002
Section 3.4, V
PP
Program and Erase Voltages added
Updated Figure 9: Automated Block Erase Flowchart
Updated Figure 10: Erase Suspend/Resume Flowchart(added program to table)
Updated Figure 16: AC Waveform: Program and Erase Operations(updated notes)
I
PPR
maximum specification change from ±25
μ
A to ±50
μ
A
Program and Erase Suspend Latency specification change
Updated Appendix A:
Ordering Information
(included 8 M and 4 M information)
Updated Figure, Appendix D:
Architecture Block Diagram
(Block info. in words not
bytes)
Minor wording changes
-003
Combined byte-wide specification (previously 290605) with this document
Improved speed specification to 80 ns (3.0 V) and 90 ns (2.7 V)
Improved 1.8 V I/O option to minimum 1.65 V (Section 3.4)
Improved several DC characteristics (Section 4.4)
Improved several AC characteristics (Sections 4.5 and 4.6)
Combined 2.7 V and 1.8 V DC characteristics (Section 4.4)
Added 5 V V
read specification (Section 3.4)
Removed 120 ns and 150 ns speed offerings
Moved
Ordering Information
from Appendix to Section 6.0; updated information
Moved
Additional Information
from Appendix to Section 7.0
Updated figure Appendix B,
Access Time vs. Capacitive Load
Updated figure Appendix C,
Architecture Block Diagram
Moved Program and Erase Flowcharts to Appendix E
Updated
Program Flowchart
Updated
Program Suspend/Resume Flowchart
Minor text edits throughout.
-004
Added 32-Mbit density
Added 98H as a reserved command (Table 4)
A
1
–A
20
= 0 when in read identifier mode (Section 3.2.2)
Status register clarification for SR3 (Table 7)
V
CC
and V
CCQ
absolute maximum specification = 3.7 V (Section 4.1)
Combined I
PPW
and I
CCW
into one specification (Section 4.4)
Combined I
PPE
and I
CCE
into one specification (Section 4.4)
Max Parameter Block Erase Time (t
WHQV2
/t
EHQV2
) reduced to 4 sec (Section 4.7)
Max Main Block Erase Time (t
WHQV3
/t
EHQV3
) reduced to 5 sec (Section 4.7)
Erase suspend time @ 12 V (t
WHRH2
/t
EHRH2
) changed to 5 μs typical and 20 μs
maximum (Section 4.7)
Ordering Information
updated (Section 6.0)
Write State Machine Current/Next States Table updated (Appendix A)
Program Suspend/Resume Flowchart updated (Appendix F)
Erase Suspend/Resume Flowchart updated (Appendix F)
Text clarifications throughout
-005
μ
BGA package diagrams corrected (Figures 3 and 4)
I
PPD
test conditions corrected (Section 4.4)
32-Mbit ordering information corrected (Section 6)
μ
BGA package top side mark information added (Section 6)
相關(guān)PDF資料
PDF描述
28F016SA 16-Mbit(1 Mbit x 16, 2 Mbit x 8) FlashFile Memory(16-M位(1 M位 x 16, 2 M位 x 8) FlashFile存儲器)
28F016XD 16-Mbit Synchronous Flash Memory(16M位DRAM接口閃速存儲器)
28F016XS 16-Mbit Synchronous Flash Memory(16M位同步閃速存儲器)
28F020 5 V Bulk Erase Flash Memory(5V 整體擦寫閃速存儲器)
28F128J3A 3 Volt Intel StrataFlash Memory(3 V 128M位Strata閃速存儲器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
28F016XD 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16) DRAM-INTERFACE FLASH MEMORY
28F016XS 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY
28F0181-1SR-10 功能描述:電磁干擾濾波珠子、扼流圈和陣列 115ohms 100MHz 10A Broad Band Frequency RoHS:否 制造商:AVX 阻抗: 最大直流電流:35 mA 最大直流電阻: 容差: 端接類型:SMD/SMT 電壓額定值:25 V 工作溫度范圍:- 25 C to + 85 C 封裝 / 箱體:0603 (1608 metric)
28F020 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F020 2048K (256K X 8) CMOS FLASH MEMORY
28F020-150 制造商: 功能描述: 制造商:undefined 功能描述:
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