參數(shù)資料
型號: 28F016SV
廠商: Intel Corp.
英文描述: 16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY
中文描述: 16兆位(1兆比特× 16,2兆比特× 8)FlashFile記憶
文件頁數(shù): 32/48頁
文件大?。?/td> 304K
代理商: 28F016SV
SMART 3 ADVANCED BOOT BLOCK
E
32
PRELIMINARY
ADDRESSES [A]
CE#(WE#) [E(W)]
OE# [G]
WE#(CE#) [W(E)]
DATA [D/Q]
RP# [P]
IH
V
IL
V
V
IH
IL
V
V
IH
IL
V
IH
V
IL
V
IL
V
IL
V
IN
D
IN
A
IN
A
Valid
SRD
IN
D
IH
V
High Z
IH
V
IL
V
V [V]
PPH
V
V
PPLK
V
PPH
1
2
WP#
IL
V
IH
V
IN
D
A
B
C
D
E
F
W8
W6
W9
W3
W4
W7
W1
W5
W2
W10
W11
(Note 1)
(Note 1)
0580_08
NOTES:
1.
CE# must be toggled low when reading Status Register Data. WE# must be inactive (high) when reading Status Register
Data.
V
CC
Power-Up and Standby.
Write Program or Erase Setup Command.
Write Valid Address and Data (for Program) or Erase Confirm Command.
Automated Program or Erase Delay.
Read Status Register Data (SRD): reflects completed program/erase operation.
Write Read Array Command.
A.
B.
C.
D.
E.
F.
Figure 8. AC Waveform: Program and Erase Operations
相關(guān)PDF資料
PDF描述
28F016SA 16-Mbit(1 Mbit x 16, 2 Mbit x 8) FlashFile Memory(16-M位(1 M位 x 16, 2 M位 x 8) FlashFile存儲器)
28F016XD 16-Mbit Synchronous Flash Memory(16M位DRAM接口閃速存儲器)
28F016XS 16-Mbit Synchronous Flash Memory(16M位同步閃速存儲器)
28F020 5 V Bulk Erase Flash Memory(5V 整體擦寫閃速存儲器)
28F128J3A 3 Volt Intel StrataFlash Memory(3 V 128M位Strata閃速存儲器)
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